Dmg1016v new prod uc t, N-channel – q, Continued) – Diodes DMG1016V User Manual
Page 4: Dmg1016v
DMG1016V
Document number: DS31767 Rev. 3 - 2
4 of 8
May 2009
© Diodes Incorporated
DMG1016V
NEW PROD
UC
T
N-CHANNEL – Q
1
(continued)
0
0.4
0.8
1.2
1.6
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50
-25
0
25
50
75
100
125
150
T , AMBIENT TEMPERATURE (°C)
A
V
, G
A
TE THRE
SHO
L
D
V
O
L
T
AG
E
(V
)
GS
(T
H
)
I = 1mA
D
I = 250µA
D
0
0.2
0.4
0.6
0.8
1.0
0.2
0.4
0.6
0.8
1.0
1.2
Fig. 8 Diode Forward Voltage vs. Current
V
, SOURCE-DRAIN VOLTAGE (V)
SD
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 25°C
A
1
10
100
0
20
Fig. 9 Typical Total Capacitance
V
, DRAIN-SOURCE VOLTAGE (V)
DS
5
15
10
C
,
C
A
P
A
C
IT
AN
C
E (
p
F
)
C
iss
C
rss
C
oss
1
10
100
1,000
0
4
8
12
16
20
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
V
, DRAIN-SOURCE VOLTAGE (V)
DS
I
, L
E
AKA
G
E
C
U
R
R
EN
T
(n
A
)
DS
S
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
Fig. 11 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.001
0.01
0.1
1
r(t),
T
R
ANSI
EN
T
T
H
E
R
MA
L
R
ESI
S
T
AN
C
E
T - T = P * R
(t)
Duty Cycle, D = t /t
J
A
JA
1 2
θ
R
(t) = r(t) *
θJA
R
R
= 260°C/W
θ
θ
JA
JA
P(pk)
t
1
t
2
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5