Dmg1016v new prod uc t, P-channel – q, Dmg1016v – Diodes DMG1016V User Manual

Page 5

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DMG1016V

Document number: DS31767 Rev. 3 - 2

5 of 8

www.diodes.com

May 2009

© Diodes Incorporated

DMG1016V

NEW PROD

UC

T



P-CHANNEL – Q

2

0

0.2

0.4

0.6

0.8

1.0

0

0.5

1.0 1.5

2.0 2.5 3.0 3.5 4.0 4.5

5

Fig. 12 Typical Output Characteristic

-V

, DRAIN-SOURCE VOLTAGE (V)

DS

V

= -2.0V

GS

V

= -4.5V

GS

V

= -3.0V

GS

V

= -1.5V

GS

V

= -8.0V

GS

V

= -2.5V

GS

0

0.2

0.4

0.6

0.8

1.0

0

0.5

1.0

1.5

2.0

2.5

3.0

Fig. 13 Typical Transfer Characteristic

-V

, GATE-SOURCE VOLTAGE (V)

GS

-I

, D

R

AI

N

C

U

R

R

E

N

T

(A

)

D

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V

= -5V

DS

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0

0.2

0.4

0.6

0.8

1.0

Fig. 14 Typical On-Resistance

vs. Drain Current and Gate Voltage

-I , DRAIN-SOURCE CURRENT (A)

D

R

, D

R

AI

N

-S

O

U

R

C

E

O

N

-R

ESI

S

T

A

N

C

E (

)

DS

(O

N)

Ω

V

= -4.5V

GS

V

= -2.5V

GS

V

= -1.8V

GS

0

0.2

0.4

0.6

0.8

1.0

0

0.2

0.4

0.6

0.8

1.0

-I , DRAIN CURRENT (A)

D

Fig. 15 Typical On-Resistance

vs. Drain Current and Temperature

R

, D

R

AI

N

-S

O

U

R

C

E

O

N

-R

ES

IS

T

A

N

C

E (

)

DS

(O

N)

Ω

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V

= -4.5V

GS

0.5

0.7

0.9

1.1

1.3

1.5

1.7

Fig. 16 On-Resistance Variation with Temperature

-50

-25

0

25

50

75

100

125 150

T , AMBIENT TEMPERATURE (°C)

A

R

, DR

AIN-

SOURCE

O

N

-R

ES

IS

T

A

NC

E (

N

O

R

M

A

L

IZED)

DS

O

N

V

= -4.5V

I = -500mA

GS

D

V

= -2.5V

I = -250mA

GS

D

0

0.2

0.4

0.6

0.8

1.0

Fig. 17 On-Resistance Variation with Temperature

-50

-25

0

25

50

75

100

125 150

T , AMBIENT TEMPERATURE (°C)

A

R

, DRAIN-

S

OURCE ON-

RESIS

T

A

NCE (

)

DS

O

N

Ω

V

= -4.5V

I = -500mA

GS

D

V

= -2.5V

I = -250mA

GS

D

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