Diodes DMC3025LSD - Manual (Page 3)

DMC3025LSD
Document number: DS35717 Rev. 5 - 2
3 of 9
www.diodes.com
August 2012
© Diodes Incorporated
DMC3025LSD
ADVANCED INFORMATION
Electrical Characteristics N-CHANNEL
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
30 — — V V
GS
= 0V, I
D
= 250 μA
Zero Gate Voltage Drain Current I
DSS
— — 1 μA V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage I GSS
— — ±1 μA V GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1.0 — 2.0 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance R
DS (ON)
— 15 20
mΩ
V
GS
= 10V, I
D
= 7.4A
— 23 32 V
GS
= 4.5V, I
D
= 6A
Forward Transfer Admittance |Y
fs
| — 8 — S V
DS
= 5V, I
D
= 10A
Diode Forward Voltage V SD
— 0.70 1.2 V V
GS = 0V, I S = 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— 501 —
pF
V DS = 15V, V GS = 0V,
f = 1.0MHz
Output Capacitance C
oss
— 72 —
Reverse Transfer Capacitance C
rss
— 57 —
Gate resistance R
g
— 1.84 — Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V GS = 4.5V) Q g
— 4.6 —
nC V DS = 15V, I D = 10A
Total Gate Charge (V
GS
= 10V) Q
g
— 9.8 —
Gate-Source Charge Q
gs
— 1.6 —
Gate-Drain Charge Q gd
— 2.0 —
Turn-On Delay Time t
D(on)
— 3.9 —
ns
V
DD
= 15V, V
GS
= 10V,
R
G
= 6 Ω, I
D
= 1A
Turn-On Rise Time t
r
— 4.2 —
Turn-Off Delay Time t
D(off)
— 16.6 —
Turn-Off Fall Time t
f
— 5.8 —
Reverse Recovery Time t
rr
— 5.5 — ns
I
F
= 12A, di/dt = 500A/ μs
Reverse Recovery Charge Q
rr
— 2.6 — nC
Electrical Characteristics P-CHANNEL
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-30 — — V V
GS
= 0V, I
D
= -250 μA
Zero Gate Voltage Drain Current I
DSS
— — -1 μA V
DS
= -30V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-1.0 — -2.0 V V
DS
= V
GS
, I
D
= -250 μA
Static Drain-Source On-Resistance R
DS (ON)
— 38 45
mΩ
V
GS
= -10V, I
D
= -5.2A
— 65 85 V GS = -4.5V, I D = -4A
Forward Transfer Admittance |Y
fs
| — 5 — S V
DS
= -5V, I
D
= -5.2A
Diode Forward Voltage V
SD
— -0.7 -1.2 V V
GS
= 0V, I
S
= -1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— 590 — pF
V
DS
= -25V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
— 69 — pF
Reverse Transfer Capacitance C rss
— 53 — pF
Gate resistance R
g
— 11 — Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
— 5.1 — nC
V
DS
= -15V, I
D
= -6A
Total Gate Charge (V GS = 10V) Q g
— 10.5 — nC
Gate-Source Charge Q
gs
— 1.8 — nC
Gate-Drain Charge Q
gd
— 1.9 — nC
Turn-On Delay Time t
D(on)
— 6.8 — ns
V
DD
= -15V, V
GS
= -10V,
R
G
= 6 Ω, I
D
= -1A
Turn-On Rise Time t r
— 4.9 — ns
Turn-Off Delay Time t
D(off)
— 28.4 — ns
Turn-Off Fall Time t
f
— 12.4 — ns
Reverse Recovery Time t rr
— 14 — ns
I
F
= 12A, di/dt = 500A/ μs
Reverse Recovery Charge Q
rr
— 11 — nC
Notes: 7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.