Maximum ratings, Thermal characteristics, Electrical characteristics n-channel q2 – Diodes DMC4047LSD User Manual

Page 2: Dmc4047lsd

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DMC4047LSD

Document number: DS36206 Rev. 4 - 2

2 of 9

www.diodes.com

November 2013

© Diodes Incorporated

DMC4047LSD


Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value_Q2

Value_Q1

Units

Drain-Source Voltage

V

DSS

40 -40 V

Gate-Source Voltage

V

GSS

±20 ±20 V

Continuous Drain Current (Note 6) V

GS

= 10V

Steady

State

T

A

= +25°C

T

A

= +70°C

I

D

7.0
5.6

-5.1
-4.1

A

t<10s

T

A

= +25°C

T

A

= +70°C

I

D

9.0
7.2

-6.5
-5.2

A

Maximum Body Diode Forward Current (Note 6)

I

S

2.5 -2.5 A

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

I

DM

70 -40 A

Avalanche Current (Notes 7) L = 0.1mH

I

AR

20 20 A

Repetitive Avalanche Energy (Notes 7) L = 0.1mH

E

AR

20 20

mJ

Thermal Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Units

Total Power Dissipation (Note 5)

T

A

= +25°C

P

D

1.3

W

T

A

= +70°C

0.8

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

R

JA

98

°C/W

t<10s 59

Total Power Dissipation (Note 6)

T

A

= +25°C

P

D

1.8

W

T

A

= +70°C

1.1

Thermal Resistance, Junction to Ambient (Note 6)

Steady state

R

θJA

71

°C/W

t<10s 43

Thermal Resistance, Junction to Case (Note 6)

R

θJC

11.8

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150

°C

Electrical Characteristics N-Channel Q2

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage

BV

DSS

40

V

V

GS

= 0V, I

D

= 250µA

Zero Gate Voltage Drain Current

I

DSS





1 µA

V

DS

= 40V, V

GS

= 0V

Gate-Source Leakage

I

GSS

100

nA

V

GS

= ±20V, V

DS

= 0V

ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage

V

GS(th)

1.4

2.4 V

V

DS

= V

GS

, I

D

= 250µA

Static Drain-Source On-Resistance

R

DS(ON)

15 24

mΩ

V

GS

= 10V, I

D

= 6A

20 32

V

GS

= 4.5V, I

D

= 5A

Diode Forward Voltage

V

SD

0.7 1.0 V

V

GS

= 0V, I

S

= 1.0A

DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance

C

iss

1060

pF

V

DS

= 20V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

84

Reverse Transfer Capacitance

C

rss

58

Gate Resistance

R

G



1.6



V

DS

= 0V, V

GS

= 0V, f = 1.0MHz

Total Gate Charge (V

GS

= 4.5V)

Q

g

8.8

nC

V

DS

= 20V, I

D

= 8A

Total Gate Charge (V

GS

= 10V)

Q

g



19.1



Gate-Source Charge

Q

gs

3.0

Gate-Drain Charge

Q

gd

2.5

Turn-On Delay Time

t

D(on)

5.3

nS

V

DD

= 25V, R

L

= 2.5Ω

V

GS

= 10V, R

G

= 3Ω

Turn-On Rise Time

t

r

7.1

Turn-Off Delay Time

t

D(off)

15.1

Turn-Off Fall Time

t

f



4.8



Body Diode Reverse Recovery Time

t

rr



10.5



nS

I

F

= 8A, di/dt = 100A/μs

Body Diode Reverse Recovery Charge

Q

rr



4.15



nC

I

F

= 8A, di/dt = 100A/μs


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