Diodes DMC4047LSD - Manual (Page 2)

DMC4047LSD
Document number: DS36206 Rev. 4 - 2
2 of 9
www.diodes.com
November 2013
© Diodes Incorporated
DMC4047LSD
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value_Q2 Value_Q1 Units
Drain-Source Voltage V
DSS
40 -40 V
Gate-Source Voltage V
GSS
±20 ±20 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
7.0
5.6 -5.1
-4.1
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
9.0
7.2 -6.5
-5.2
A
Maximum Body Diode Forward Current (Note 6) I
S
2.5 -2.5 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) I
DM
70 -40 A
Avalanche Current (Notes 7) L = 0.1mH I
AR
20 20 A
Repetitive Avalanche Energy (Notes 7) L = 0.1mH E
AR
20 20 mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
1.3
W
T
A
= +70°C 0.8
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
JA
98
°C/W
t<10s 59
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
1.8
W
T
A
= +70°C 1.1
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
θJA
71
°C/W t<10s 43
Thermal Resistance, Junction to Case (Note 6) R
θJC
11.8
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics N-Channel Q2
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
40   V V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current I
DSS
  1 µA V
DS
= 40V, V
GS
= 0V
Gate-Source Leakage I
GSS
  100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
1.4  2.4 V V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance R
DS(ON)
 15 24
mΩ
V
GS
= 10V, I
D
= 6A
 20 32 V
GS
= 4.5V, I
D
= 5A
Diode Forward Voltage V
SD
 0.7 1.0 V V
GS
= 0V, I
S
= 1.0A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
 1060 
pF
V
DS
= 20V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
 84 
Reverse Transfer Capacitance C
rss
 58 
Gate Resistance R
G
 1.6  Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
 8.8 
nC  V
DS
= 20V, I
D
= 8A
Total Gate Charge (V
GS
= 10V) Q
g
 19.1 
Gate-Source Charge Q
gs
 3.0 
Gate-Drain Charge Q
gd
 2.5 
Turn-On Delay Time t
D(on)
 5.3 
nS
V
DD
= 25V, R
L
= 2.5Ω
V
GS
= 10V, R
G
= 3Ω
Turn-On Rise Time t
r
 7.1 
Turn-Off Delay Time t
D(off)
 15.1 
Turn-Off Fall Time t
f
 4.8 
Body Diode Reverse Recovery Time t
rr
 10.5  nS I
F
= 8A, di/dt = 100A/μs
Body Diode Reverse Recovery Charge Q
rr
 4.15  nC I
F
= 8A, di/dt = 100A/μs