Diodes DMC4047LSD - Manual (Page 3)

DMC4047LSD
Document number: DS36206 Rev. 4 - 2
3 of 9
www.diodes.com
November 2013
© Diodes Incorporated
DMC4047LSD
Electrical Characteristics P-Channel Q1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage BV
DSS
-40   V V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current I
DSS
  -1 µA V
DS
= -40V, V
GS
= 0V
Gate-Source Leakage I
GSS
  100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage V
GS(th)
-1.0  -2.2 V V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance R
DS(ON)
 33 45
mΩ
V
GS
= -10V, I
D
= -5A
 40 55 V
GS
= -4.5V, I
D
= -4A
Diode Forward Voltage V
SD
 -0.7 -1.0 V V
GS
= 0V, I
S
= -1.0A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance C
iss
 1154 
pF
V
DS
= -20V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
 84 
Reverse Transfer Capacitance C
rss
 66 
Gate Resistance R
G
 12.6  Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= -4.5V) Q
g
 10.6 
nC  V DS = -20V, I D = -4.9A
Total Gate Charge (V
GS
= -10V) Q
g
 21.5 
Gate-Source Charge Q
gs
 2.2 
Gate-Drain Charge Q
gd
 3.3 
Turn-On Delay Time t
D(on)
 8.7 
nS
V DS = -20V, I D = -3.9A
V GS = -4.5V, R G = 1Ω
Turn-On Rise Time t
r
 19.6 
Turn-Off Delay Time t
D(off)
 34.9 
Turn-Off Fall Time t
f
 25.5 
Body Diode Reverse Recovery Time t
rr
 9.61  nS I
S
= -3.9A, dI/dt = 100A/μs
Body Diode Reverse Recovery Charge Q
rr
 3.30  nC I
S
= -3.9A, dI/dt = 100A/μs
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.