Diodes DMG1029SV - Manual (Page 3)

DMG1029SV
Document number: DS35421 Rev. 3 - 2
3 of 9
www.diodes.com
August 2013
© Diodes Incorporated
DMG1029SV
NEW PROD
UC
T
Electrical Characteristics N-CHANNEL – Q1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
60 — — V V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current @T
C
= +25°C I
DSS
— — 10 nA V
DS
=50V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±50 nA V
GS
= ±5V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
1.0 — 2.5 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance R
DS(ON)
— 1.3 1.7
Ω
V
GS
= 10V, I
D
= 500mA
— 1.5 3 V
GS
= 4.5V, I
D
= 200mA
Forward Transfer Admittance |Y
fs
| 80 — — mS V
DS
= 10V, I
D
= 200mA
Diode Forward Voltage V
SD
— — 1.4 V V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
— 30 — pF
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
— 4.2 — pF
Reverse Transfer Capacitance C
rss
— 2.9 — pF
Total Gate Charge Q
g
— 0.3 — nC
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 250mA
Gate-Source Charge Q
gs
— 0.2 — nC
Gate-Drain Charge Q
gd
— 0.08 — nC
Turn-On Delay Time t
D(on)
— 3.9 — ns
V
DD
= 30V, V
GS
= 10V,
R
G
= 25Ω, I
D
= 200mA
Turn-On Rise Time t
r
— 3.4 — ns
Turn-Off Delay Time t
D(off)
— 15.7 — ns
Turn-Off Fall Time t
f
— 9.9 — ns
Electrical Characteristics P-CHANNEL – Q2
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
-60 — — V V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current @T
C
= +25°C I
DSS
— — -25 nA V
DS
= -50V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±100 nA V
GS
= ±5V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
-1 — -3.0 V V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance R
DS (ON)
— 2.7 4
Ω
V
GS
= -10V, I
D
= -500mA
— 3.2 6 V
GS
= -4.5V, I
D
= -200mA
Forward Transfer Admittance |Y
fs
| 50 — — mS V
DS
= -25V, I
D
= -100mA
Diode Forward Voltage V
SD
— — -1.4 V V
GS
= 0V, I
S
= -115mA
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
— 25 — pF
V
DS
= -25V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
— 4.7 — pF
Reverse Transfer Capacitance C
rss
— 2.7 — pF
Total Gate Charge Q
g
— 0.28 — nC
V
GS
= -4.5V, V
DS
= -10V,
I
D
= -500mA
Gate-Source Charge Q
gs
— 0.14 — nC
Gate-Drain Charge Q
gd
— 0.08 — nC
Turn-On Delay Time t
D(on)
— 5.5 — ns
V
DD
= -30V, V
GS
= -10V,
R
G
= 50Ω, I
D
= -270mA
Turn-On Rise Time t
r
— 7.9 — ns
Turn-Off Delay Time t
D(off)
— 10.6 — ns
Turn-Off Fall Time t
f
— 11.6 — ns
Notes: 8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.