Diodes DMG4932LSD - Manual

DMG4932LSD
Document number: DS32119 Rev. 4 - 2
1 of 9
www.diodes.com
August 2010
© Diodes Incorporated
DMG4932LSD
NEW PROD
UC
T
ASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
•
High Density UMOS with Schottky Barrier Diode
• Low Leakage Current at High Temp.
• High
Conversion Efficiency
• Low
On-Resistance
•
Low Input Capacitance
• Fast Switching Speed
• Utilizes Diodes’ Monolithic DIOFET Technology to Increase
Conversion Efficiency
•
100% UIS and R
g
Tested
•
Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case:
SO-8
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram Below
•
Marking Information: See Page 8
•
Ordering Information: See Page 8
• Weight: 0.072 grams (approximate)
Maximum Ratings – Q1
@T A = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
30 V
Gate-Source Voltage V
GSS
±12 V
Continuous Drain Current (Note 3)
Steady
State
T
A
= 25°C
T
A
= 85°C
I
D
9.5
7.2
A
Pulsed Drain Current (Note 4) I
DM
40 A
Avalanche Current (Notes 4 & 5) I
AR
13 A
Repetitive Avalanche Energy (Notes 4 & 5) L = 0.3mH E
AR
25.4 mJ
Maximum Ratings – Q2
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage V DSS
30 V
Gate-Source Voltage V
GSS
±25 V
Continuous Drain Current (Note 3)
Steady
State
T
A
= 25°C
T
A
= 85°C
I
D
9.5
7.5
A
Pulsed Drain Current (Note 4) I DM
40 A
Avalanche Current (Notes 4 & 5) I
AR
13 A
Repetitive Avalanche Energy (Notes 4 & 5) L = 0.3mH E
AR
25.4 mJ
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) P
D
1.19 W
Thermal Resistance, Junction to Ambient @T
A
= 25°C (Note 3) R θJA 107 °C/W
Operating and Storage Temperature Range T
J , T
STG
-55 to +150 °C
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout. The value in any given application depends on the user’s specific board design.
4. Repetitive rating, pulse width limited by junction temperature.
5. I
AR
and E
AR
rating are based on low frequency and duty cycles to keep T
J
= 25°C
Top View Internal Schematic
Top View
D2
S2/D1 G1
G2
S1
D2 S2/D1
S2/D1
D
2
S
2
G
2
D
1
S
1
G
1
N-Channel MOSFET N-Channel MOSFET
Q1 Q2
D iodes Schottky I ntegrated M O S FET