Diodes DMG4932LSD - Manual (Page 2)

DMG4932LSD
Document number: DS32119 Rev. 4 - 2
2 of 9
www.diodes.com
August 2010
© Diodes Incorporated
DMG4932LSD
NEW PROD
UC
T
Electrical Characteristics – Q1
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
30 - - V V
GS
= 0V, I
D
= 1mA
Zero Gate Voltage Drain Current I
DSS
- - 0.1 mA V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - ±100 nA V
GS
= ±12V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V GS(th)
1.0 - 2.4 V V DS = V GS , I D = 250 μA
Static Drain-Source On-Resistance R DS (ON)
-
10
12 15
18
mΩ
V
GS
= 10V, I
D
= 9A
V
GS
= 4.5V, I
D
= 7A
Forward Transfer Admittance |Y fs | - 14 - S V DS = 10V, I D = 9A
Diode Forward Voltage V
SD
- 0.4 0.6 V V
GS
= 0V, I
S
= 1A
Maximum Body-Diode + Schottky Continuous Current I
S
- - 5 A -
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
- 1932 - pF
V
DS
= 15V, V
GS
= 0V, f = 1.0MHz Output Capacitance C
oss
- 154 - pF
Reverse Transfer Capacitance C
rss
- 121 - pF
Gate Resistance R
g
- 2.68 - Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (4.5V) Q
g
- 18.1 - nC
V
DS
= 15V, V
GS
= 10V, I
D
= 9A
Total Gate Charge (10V) Q
g
- 42.0 - nC
Gate-Source Charge Q
gs
- 4.5 - nC
Gate-Drain Charge Q
gd
- 4.0 - nC
Turn-On Delay Time t
D(on)
- 6.16 - ns
V
GS
= 10V, V
DS
= 15V,
R
G
= 3 Ω, R
L
= 1.7 Ω
Turn-On Rise Time t r
- 7.22 - ns
Turn-Off Delay Time t
D(off)
- 36.76 - ns
Turn-Off Fall Time t
f
- 5.38 - ns
0 0.5 1 1.5 2
Fig. 1 Typical Output Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
DS
0
10
15
20
25
30
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
5
V = 2.0V
GS
V = 2.2V
GS
V = 2.5V
GS
V = 3.0V
GS
V = 3.5V
GS
V = 4.0V
GS
V = 4.5V
GS
0
5
10
15
20
25
30
0 0.5 1 1.5 2 2.5 3
Fig. 2 Typical Transfer Characteristic
V , GATE-SOURCE VOLTAGE (V)
GS
I,
D
R
AI
N
C
U
R
R
EN
T
(A)
D
V = 85°C
GS
V = 125°C
GS
V = 25°C
GS
V = -55°C
GS
V = 150°C
GS
V = 5V
DS