Diodes DT1042-04SO - Manual (Page 2)

DT1042-04SO
Document number: DS36292 Rev. 2 - 2
2 of 5
www.diodes.com
September 2013
© Diodes Incorporated
DT1042-04SO
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit Conditions
Peak Pulse Current, per IEC 61000-4-5 I
PP_I/O
±6 A I/O to V
SS
, 8/20 μs
Peak Pulse Power, per IEC 61000-4-5 P
PP_I/O
55 W I/O to V
SS
, 8/20 μs
Operating Voltage (DC) V DC
5.5 V I/O to V SS
ESD Protection – Contact Discharge, per IEC 61000-4-2 V
ESD_I/O
±16 kV I/O to V
SS
ESD Protection – Air Discharge, per IEC 61000-4-2 V
ESD_I/O
+27/-19 kV I/O to V
SS
Operating Temperature T
OP
-55 to +85 °C —
Storage Temperature T STG
-55 to +150 °C —
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation Typical (Note 5) P
D
300 mW
Thermal Resistance, Junction to Ambient Typical (Note 5) R θJA 417 °C/W
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Conditions
Reverse Working Voltage V RWM
— —
5.0 V V
CC
to V
SS
Reverse Current (Note 6) I
R(Vcc to Vss)
— —
1.0 μA V
R
= V
RWM
= 5V, V
CC
to V
SS
Reverse Current (Note 6) I
R(IO to Vss)
— —
0.5 μA 
V R = V RWM = 5V, any I/O to V SS
Reverse Breakdown Voltage V BR 6.2
— —
V I
R
= 1mA, V
CC
to V
SS
Forward Clamping Voltage V
F
-1.0 -0.8
—
V I
F
= -15mA, V
CC
to V
SS
Reverse Clamping Voltage(Note 7)
V
C_Vcc
—
6.3
—
V I
PP
= 9A, V
CC
to V
SS
, 8/20 μs
V
C_I/O
—
7.7 9 V I
PP
= 6A, I/O to V
SS
, 8/20 μs
ESD Clamping Voltage
V
ESD_Vcc
—
6.8
—
V TLP, 10A, tp = 100 ns, V
CC
to V
SS,
per Fig. 8
V
ESD_I/O
—
9
—
V TLP, 10A, tp = 100 ns, I/O to V
SS,
per Fig. 8
Dynamic Resistance
R
DIF_Vcc
—
0.1
— Ω TLP, 10A, tp = 100 ns, V CC to V SS
R
DIF_I/O
—
0.25
— Ω TLP, 10A, tp = 100 ns, I/O to V
SS
Channel Input Capacitance C
I/O to
V
SS
—
0.65 0.8 pF V
R
= 2.5V, V
CC
= 5V, f = 1MHz
Variation of Channel Input Capacitance  C
I/O
—
0.02
—
pF
V
CC
= 5V, V
SS
= 0V, I/O = 2.5V, f =1MHz,
T=+25°C , I/O_x to V
SS
– I/O_y to V
SS
Notes: 5. Device mounted on Polymide PCB pad layout (2oz copper) as shown on Diodes Inc. suggested pad layout AP02001, which can be found on our website
at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
7. Clamping voltage value is based on an 8x20µs peak pulse current (I pp ) waveform.