Diodes DRDNB21D - Manual (Page 2)

DRDNB21D
Document number: DS30756 Rev. 6 - 2
2 of 7
www.diodes.com
February 2011
© Diodes Incorporated
DRDNB21D
Maximum Ratings , Total Device
@T A = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 4) P
D
200 mW
Thermal Resistance, Junction to Ambient Air (Note 4) R θJA 625 °C/W
Operating and Storage Junction Temperature Range T J , T STG
-55 to +150 °C
Maximum Ratings , Pre-Biased NPN Transistor
@T A = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Emitter Voltage V
CC
50 V
Base-Emitter Voltage V
in
-5 to +12 V
Output Current I O
100 mA
Peak Collector Current I
CM
100 mA
Maximum Ratings, Switching Diode
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage V
RM
100 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage V
RRM
V
RWM
V
R
75 V
RMS Reverse Voltage V
R(RMS)
53 V
Forward Continuous Current (Note 4) I FM
500 mA
Average Rectified Output Current (Note 4) I
O
250 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0
μs
@ t = 1.0s
I
FSM
4.0
1.0
A
Electrical Characteristics, Pre-Biased NPN Transistor
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Input Voltage
V
l(off)
0.5 ⎯ ⎯ V V
CC
= 5V, I
O
= 100 μA
V l(on)
⎯ ⎯ 1.1 V V O = 0.3V, I O = 5mA
Output Voltage V
O(on)
⎯ ⎯ 0.3 V I
O
/I
l
= 50mA/0.25mA
Input Current I
l
⎯ ⎯ 3.6 mA V
I
= 5V
Output Current I O(off)
⎯ ⎯ 0.5 uA V CC = 50V, V I = 0V
DC Current Gain G
l
80 ⎯ ⎯ ⎯
V
O
= 5V, I
O
= 10mA
Input Resistor Tolerance ΔR1 -30 ⎯ +30 % -
Resistance Ratio Tolerance
ΔR2/R1
-20
⎯
+20 % -
Gain-Bandwidth Product* f
T
⎯ 250 ⎯ MHz V
CE
= 10V, I
E
= 5mA, f = 100MHz
* Transistor - For Reference Only
Electrical Characteristics, Switching Diode
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 5) V
(BR)R
75 ⎯ V I
R
= 10 μA
Forward Voltage V
F
0.62
⎯
⎯
⎯
0.72
0.855
1.0
1.25
V
I
F
= 5.0mA
I
F
= 10mA
I
F
= 100mA
I
F
= 150mA
Reverse Current (Note 5) I
R
⎯
2.5
50
30
25
μA
μA
μA
nA V R = 75V
V
R
= 75V, T
J
= 150
°C
V
R
= 25V, T
J
= 150
°C
V
R
= 20V
Total Capacitance C
T
⎯ 4.0 pF V
R
= 0, f = 1.0MHz
Reverse Recovery Time t
rr
⎯ 4.0 ns I
F
= I
R
= 10mA, I
rr
= 0.1 x I
R
, R
L
= 100
Ω
Notes: 4. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com
5. Short duration pulse test used to minimize self-heating effect.