Diodes DRDNB21D - Manual (Page 3)

DRDNB21D
Document number: DS30756 Rev. 6 - 2
3 of 7
www.diodes.com
February 2011
© Diodes Incorporated
DRDNB21D
Device Characteristics
0
50
100
120 200
P
,
P
O
WE
R
DIS
S
IP
A
T
IO
N (
m
W
)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve (Total Device)
A
150
200
250
0
Note 4
160 80 40
Pre-Biased NPN Transistor Elements
0.001
0.01
0.1
1
0 10 20 30 40 50
V,
C
O
LL
E
C
T
O
R
-E
MI
T
T
E
R
SA
TURA
TI
O
N
VO
L
T
AG
E
(V)
CE
(S
A
T
)
I , COLLECTOR CURRENT (mA)
Fig. 2 Typical V vs. I
C
CE(SAT) C
I /I = 10
C B
T = -25 C
A
°
T = 75 C
A
°
T = 25 C
A
°
10
1,000
100
1 10 100
h,
D
C
C
U
R
R
EN
T
G
AI
N
FE
I , COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain
C