Diodes LMN200B02 - Manual

DS30658 Rev. 7 - 2 1 of 9
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LMN200B02
© Diodes Incorporated
LMN200B02
200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET
WITH GATE PULL DOWN RESISTOR
General Description
LMN200B02 is best suited for applications where the load needs to
be turned on and off using control circuits like micro-controllers,
comparators etc. particularly at a point of load. It features a
discrete pass transistor with stable V
CE(SAT)
which does not
depend on the input voltage and can support continuous maximum
current of 200 mA . It also contains a discrete N-MOSFET that can
be used as control. This N-MOSFET also has a built-in pull down
resistor at its gate. The component can be used as a part of a
circuit or as a stand alone discrete device.
Features
•
Voltage Controlled Small Signal Switch
•
N-MOSFET with Gate Pull-Down Resistor
• Surface Mount Package
• Ideally Suited for Automated Assembly Processes
•
Lead Free By Design/RoHS Compliant (Note 1)
•
"Green" Device (Note 2)
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
•
Terminal Connections: See Diagram
•
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
•
Marking Information: See Page 8
• Ordering Information: See Page 8
• Weight: 0.006 grams (approximate)
Sub-Component P/N Reference Device Type R1 (NOM) R2 (NOM) R3 (NOM) Figure
DDTB142JU_DIE Q1 PNP Transistor 10K 470 ⎯ 2
DSNM6047_DIE (with Gate Pull-Down
Resistor)
Q2 N-MOSFET ⎯ ⎯ 37K 2
Maximum Ratings, Total Device
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 3) P
D
200 mW
Power Derating Factor above 125°C P
der
1.6 mW/°C
Output Current I
out
200 mA
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Operating and Storage Temperature Range T
J
,T
STG
-55 to +150 °C
Thermal Resistance, Junction to Ambient Air (Equivalent to
One Heated Junction of PNP Transistor) (Note 3)
R θJA 625 °C/W
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Fig. 1: SOT-363
S
D
G
C
E
B
Q2
NMOS
R3
37K
R2
470
Q1
PNP
R1 10K
1 2 3
4 5 6
C_Q1
E_Q1 G_Q2 D_Q2
S_Q2 B_Q1
DSNM6047_DIE
DDTB142JU_DIE
Fig. 2 Schematic and Pin Configuration
1
2
3
4
5
6
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