Diodes LMN200B02 - Manual (Page 6)

DS30658 Rev. 7 - 2 6 of 9
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LMN200B02
© Diodes Incorporated
Typical N-Channel MOSFET (Q2) Characteristics
0
0.2
0.4
0.6
0.8
1.0
0 1 2 3 4 5 6 7
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Output Characteristics
DS
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
V , GATE-SOURCE VOLTAGE (V)
Fig. 10 Transfer Characteristics
GS
I,
D
R
AIN
C
U
R
R
EN
T
(A
)
D
T , JUNCTION TEMPERATURE (°C)
Fig. 11 Gate Threshold Voltage
vs. Junction Temperature
J
0
1.2
1.4
1.6
1.8
2.0
2.2
-50 -75 -25 0 25 50 75 100 125 150
0
1
2
3
4
5
I , DRAIN CURRENT (A)
Fig. 12 Static Drain-Source On-Resistance
vs. Drain Current
D
R
,
S
T
A
T
IC
D
R
A
IN
-S
O
U
R
C
E
O
N
-S
T
A
T
E
R
E
S
IS
T
A
N
C
E
(
)
D
S
(o
n
)
Ω
1
I , DRAIN CURRENT (A)
Fig. 13 Static Drain-Source On-Resistance
vs. Drain Current
D
4
R
,
S
T
A
T
IC
D
R
A
IN
-S
O
U
R
C
E
O
N
-S
T
A
T
E
R
E
S
IS
T
A
N
C
E
(
)
D
S
(o
n
)
Ω
0
V GATE SOURCE VOLTAGE (V)
Fig. 14 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
GS ,
R
,
S
T
A
T
IC
D
R
A
IN
-S
O
U
R
C
E
O
N
-S
T
A
T
E
R
E
S
IS
T
A
N
C
E
(
)
D
S
(o
n
)
Ω