Diodes LMN400E01 - Manual (Page 2)

LMN400E01
Document number: DS30750 Rev. 8 - 2
2 of 10
www.diodes.com
July 2011
© Diodes Incorporated
LMN400E01
Maximum Ratings, Total Device
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 4) P
D
200 mW
Power Derating Factor above 37.5
°C
P
der
1.6 mW/°C
Output Current I
out
400 mA
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Operating and Storage Temperature Range T
j
, T
STG
-55 to +150 °C
Thermal Resistance, Junction to Ambient Air (Note 4) R θJA 625 °C/W
Maximum Ratings:
Pre-Biased PNP Transistor (Q1)
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
-50 V
Collector-Emitter Voltage V
CEO
-50 V
Supply Voltage V
cc
-50 V
Input Voltage V
in
-6 to +5 V
Output Current I
C
-400 mA
Maximum Ratings:
ESD Protected N-Channel MOSFET (Q2)
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
60 V
Drain Gate Voltage (R
GS
≤ 1M Ohm) V
DGR
60 V
Gate-Source Voltage Continuous
Pulsed (tp<50 uS)
V
GSS
+/-20
V
+/-40
Drain Current (Note 4) Continuous (V gs = 10V)
Pulsed (tp <10 uS, Duty Cycle <1%)
I D
300
mA
800
Continuous Source Current I
S
300 mA
Notes: 4. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.