Diodes LMN400E01 - Manual (Page 8)

LMN400E01
Document number: DS30750 Rev. 8 - 2
8 of 10
www.diodes.com
July 2011
© Diodes Incorporated
LMN400E01
Application Details
PNP Transistor and ESD Protected N-MOSFET integrated as one in
LMN400E01 can be used as a discrete entity for general application
or as an integrated circuit to function as a Load Switch. When it is
used as the latter as shown in Fig. 20, various input voltage sources
can be used as long as it does not exceed the maximum ratings of
the device. These devices are designed to deliver continuous output
load current up to a maximum of 400 mA. The MOSFET Switch
draws no current, hence loading of control circuitry is prevented. Care
must be taken for higher levels of dissipation while designing for
higher load conditions. These devices provide high power and also
consume less space. The product mainly helps in optimizing power
usage, thereby conserving battery life in a controlled load system like
portable battery powered applications. (Please see Fig. 21 for one
example of a typical application circuit used in conjunction with a
voltage regulator as a part of power management system).
E
G
Q 1 P N P
Q 2
B
C
S
R 2 2 2 0
R 1
1 0 K
D
Control
LOAD
V
OUT V
IN
N-MOSFET
GND
Control
Vin Vout
U2
1
3
2
4
5
6
E_Q1
D_Q2
G_Q2
S_Q2
C_Q1
B_Q1
5V Supply
U1
Vin
OUT1
GND
U3
IN OUT
Load Switch
Control Logic
Circuit (PIC,
Comparator
etc)
LMN400E01
Diodes Inc.
Voltage Regulator
Point of
Load
Fig. 20 Circuit Diagram
Fig. 21 Typical Application Circuirt