Diodes DLD101 - Manual (Page 2)

DLD101
Document number: DS32007 Rev. 8 - 2
2 of 9
www.diodes.com
April 2010
© Diodes Incorporated
DLD101
NEW PROD
UC
T
Thermal Characteristics – Total Device
Characteristic Symbol Value Unit
Power Dissipation @T A = 25°C P D
0.7 (Note 3)
0.9 (Note 4)
1.4 (Note 5)
W
Thermal Resistance Junction to Ambient @T
A
= 25°C R θJA
See Figure 1
(Notes 3, 4, & 5)
°C/W
Thermal Resistance Junction to Case @T A = 25°C R θJC
See Figure 2
(Notes 3, 4, & 5)
°C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150
°C
Notes: 3. Part mounted on FR-4 substrate PC board, with minimum recommended pad layout (see page 6).
4. Part mounted on FR-4 substrate PC board, 2oz Copper with 6 mm2 Cu Area, MOSFET element activated.
5. Part mounted on FR-4 substrate PC board, 2oz Copper with 35 mm2 Cu Area, MOSFET element activated.
Electrical Characteristics: (Q1)
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
100 ⎯ ⎯ V V
GS
= 0V, I
D
= 250
μA
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ 1 μA V
DS
= 60V, V
GS
= 0V
Gate-Source Leakage I GSS
⎯ ⎯ ±100 nA V GS =
±20V, V
DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
2.0 ⎯ 4.1 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance R
DS (ON)
⎯
⎯
⎯ 0.85
0.99
Ω
V
GS
= 10V, I
D
= 1.5A
V
GS
= 6V, I
D
= 1A
Forward Transconductance g
fs
⎯ 0.9 ⎯ S V
DS
= 15V, I
D
= 1A
Diode Forward Voltage V
SD
⎯ 0.89 1.1 V V
GS
= 0V, I
S
= 1.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯ 129 ⎯ pF
V
DS
= 50V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C oss
⎯ 14 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 8 ⎯ pF
SWITCHING CHARACTERISTICS
Total Gate Charge
Q
g
⎯ 3.4 ⎯
nC V
DS
= 50V, V
GS
= 10V, I
D
= 1A Gate-Source Charge Q
gs
⎯ 0.9 ⎯
Gate-Drain Charge Q
gd
⎯ 1 ⎯
Turn-On Delay Time t d(on)
⎯ 7.9 ⎯
ns
V
GS
= 50V, V
DS
= 10V,
I D = 1A, R G
≈ 6Ω
Rise Time t
r
⎯ 11.4 ⎯
Turn-Off Delay Time t
d(off)
⎯ 14.3 ⎯
Fall Time t f
⎯ 9.6 ⎯
Electrical Characteristics: (Q2)
@T
A
= 25°C unless otherwise specified
Characteristic (Note 6) Symbol Min Typ Max Unit Test Condition
Input Voltage
V
I(off)
0.4 - - V V
CC
= 5V, I
O
= 100
μA
V
I(on)
- - 1.5 V V
CC
= 0.3V, I
O
= 5mA
Output Voltage V
O(on)
- 0.05 0.3 V I
O
/I
I
= 5mA/0.25mA
Output Current I O(off)
- - 0.5 μA
V CC = 50V, V I = 0V
DC Current Gain G
1
80 - - - V
O
= 5V, I
O
= 10mA
Input Resistance R
1
3.2 4.7 6.2 k Ω -
Resistance Ratio R 2 /R 1
8 10 12 - -
Transition Frequency f
T
- 260 - MHz
V
CE
= 10V, I
E
= 5mA,
f = 100MHz
Notes: 6. Short duration pulse test used to minimize self-heating effect.