Diodes DLD101 - Manual (Page 4)

DLD101
Document number: DS32007 Rev. 8 - 2
4 of 9
www.diodes.com
April 2010
© Diodes Incorporated
DLD101
NEW PROD
UC
T
Q1 Typical Performance Curves
0
1
2
3
4
5
6
7
8
9
10
1.5 2 2.5 3 3.5 4 4.5
Fig. 4 Typical Transfer Characteristic
V , GATE-SOURCE VOLTAGE (V)
GS
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V =
DS
V
GS
0 0.4 0.8 1.2 1.6
Fig. 5 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN CURRENT (A)
D
0.1
1
10
R
, D
R
AI
N-
S
O
U
R
C
E
O
N-
R
ESI
S
T
AN
C
E (
)
DS
(O
N)
Ω
V = 10V
GS
V = 6V
GS
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 0.4 0.8 1.2 1.6
I , DRAIN CURRENT (A)
D
Fig. 6 Typical On-Resistance
vs. Drain Current and Temperature
R
, D
R
AI
N-
S
O
U
R
C
E
O
N-
R
ES
IS
T
AN
C
E (
)
DS
(O
N)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 10V
GS
0
0.5
1.0
1.5
2.0
2.5
3.0
Fig. 7 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
R
, DRA
IN-
S
OURCE
O
N
-R
ESI
ST
ANCE (
N
O
R
M
A
L
IZED)
DS
O
N
V = 10V
I = 1.5A
GS
D
V = 6V
I = 1A
GS
D
Fig. 8 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0
0.3
0.6
0.9
1.2
1.5
R
, D
R
AI
N-
S
O
U
R
C
E
O
N
-R
ESI
S
T
ANCE (
)
DS
O
N
Ω
V = 10V
I = 1.5A
GS
D
V = 6V
I = 1A
GS
D
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
4.0
Fig. 9 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V
, G
A
TE
T
HRE
SHO
L
D VO
L
T
AG
E
(
V
)
GS
(T
H
)
I = 1mA
D
I = 250µA
D