Electrical characteristics – Diodes MMDT4126 User Manual
Page 2
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
DS30160 Rev. 9 - 2
2 of 4
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MMDT4126
© Diodes Incorporated
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V
(BR)CBO
-25
⎯
V
I
C
= -10
μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
-25
⎯
V
I
C
= -1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
-4.0
⎯
V
I
E
= -10
μA, I
C
= 0
Collector Cutoff Current
I
CBO
⎯
-50
nA
V
CB
= -20V, I
E
= 0V
Emitter Cutoff Current
I
EBO
⎯
-50
nA
V
EB
= -3.0V, I
C
= 0V
ON CHARACTERISTICS (Note 4)
DC Current Gain
h
FE
120
60
360
⎯
⎯
I
C
= -2.0mA, V
CE
= -1.0V
I
C
= -50mA, V
CE
= -1.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
-0.40
V
I
C
= -50mA, I
B
= -5.0mA
Base-Emitter Saturation Voltage
V
BE(SAT)
⎯
-0.95
V
I
C
= -50mA, I
B
= -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯
4.5
pF
V
CB
= -5.0V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
ibo
⎯
10
pF
V
EB
= -0.5V, f = 1.0MHz, I
C
= 0
Small Signal Current Gain
h
fe
120
480
⎯
V
CE
= -1.0V, I
C
= -2.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
f
T
250
⎯
MHz
V
CE
= -20V, I
C
= -10mA,
f = 100MHz
Noise Figure
NF
⎯
4.0
dB
V
CE
= -5.0V, I
C
= -100
μA,
R
S
= 1.0k
Ω,
f = 1.0kHz
Notes:
4. Short duration pulse test used to minimize self-heating effect.
1
100
10
0.1
1
10
100
C
, I
N
P
U
T
C
A
P
A
C
IT
AN
C
E (
p
F
)
C
, O
U
T
P
UT
CA
P
A
CIT
A
NCE (
pF
)
IB
O
OB
O
V , COLLECTOR-BASE VOLTAGE (V)
Fig. 2, Input and Output Capacitance vs.
Collector-Base Voltage
CB
0
50
100
25
50
75
100 125
150
175 200
P
, P
O
WE
R
DI
SSI
P
A
T
IO
N (mW
)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs.
Ambient Temperature
A
150
200
250
300
350
0