Mmdt4146 – Diodes MMDT4146 User Manual
Page 2
MMDT4146
Document number: DS30162 Rev. 11 - 2
2 of 5
www.diodes.com
January 2009
© Diodes Incorporated
MMDT4146
Electrical Characteristics, NPN 4124 Section
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
V
(BR)CBO
30
⎯
V
I
C
= 10
μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
25
⎯
V
I
C
= 1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
5.0
⎯
V
I
E
= 10
μA, I
C
= 0
Collector Cutoff Current
I
CBO
⎯
50
nA
V
CB
= 20V, I
E
= 0V
Emitter Cutoff Current
I
EBO
⎯
50
nA
V
EB
= 3.0V, I
C
= 0V
ON CHARACTERISTICS (Note 6)
DC Current Gain
h
FE
120
60
360
⎯
⎯
I
C
= 2.0mA, V
CE
= 1.0V
I
C
= 50mA, V
CE
= 1.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
0.30
V
I
C
= 50mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage
V
BE(SAT)
⎯
0.95
V
I
C
= 50mA, I
B
= 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯
4.0
pF
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
ibo
⎯
8.0
pF
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Small Signal Current Gain
h
fe
120
480
⎯
V
CE
= 1.0V, I
C
= 2.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
f
T
300
⎯
MHz
V
CE
= 20V, I
C
= 10mA,
f = 100MHz
Noise Figure
NF
⎯
5.0
dB
V
CE
= 5.0V, I
C
= 100
μA,
R
S
= 1.0k
Ω,
f = 1.0kHz
Electrical Characteristics, PNP 4126 Section
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
V
(BR)CBO
-25
⎯
V
I
C
= -10
μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
-25
⎯
V
I
C
= -1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
-4.0
⎯
V
I
E
= -10
μA, I
C
= 0
Collector Cutoff Current
I
CBO
⎯
-50
nA
V
CB
= -20V, I
E
= 0V
Emitter Cutoff Current
I
EBO
⎯
-50
nA
V
EB
= -3.0V, I
C
= 0V
ON CHARACTERISTICS (Note 6)
DC Current Gain
h
FE
120
60
360
⎯
⎯
I
C
= -2.0mA, V
CE
= -1.0V
I
C
= -50mA, V
CE
= -1.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
-0.40
V
I
C
= -50mA, I
B
= -5.0mA
Base-Emitter Saturation Voltage
V
BE(SAT)
⎯
-0.95
V
I
C
= -50mA, I
B
= -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯
4.5
pF
V
CB
= -5.0V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
ibo
⎯
10
pF
V
EB
= -0.5V, f = 1.0MHz, I
C
= 0
Small Signal Current Gain
h
fe
120
480
⎯
V
CE
= -1.0V, I
C
= -2.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
f
T
250
⎯
MHz
V
CE
= -20V, I
C
= -10mA,
f = 100MHz
Noise Figure
NF
⎯
4.0
dB
V
CE
= -5.0V, I
C
= -100
μA,
R
S
= 1.0k
Ω,
f = 1.0kHz
Notes:
6. Short duration pulse test used to minimize self-heating effect.