Electrical characteristics, A product line of diodes incorporated – Diodes ZXTP19020DZ User Manual
Page 4
ZXTP19020DZ
Da
tasheet Number: DS33733 Rev. 2 - 2
4 of 7
November 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTP19020DZ
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ.
Max
Unit
Test
Condition
Collector-Base Breakdown Voltage
BV
CBO
-25 -55 -
V
I
C
= -100µA
Collector-Emitter Breakdown Voltage (Notes 9)
BV
CEO
-20 -50 -
V
I
C
= -10mA
Emitter-Collector breakdown voltage
(reverse blocking)
BV
ECX
-4 -8.6 -
V
I
E
= -100µA, R
BC
< 1k
Ω or
0.25V > V
BC
> -0.25V
Emitter-Collector breakdown voltage
(reverse blocking)
BV
ECO
-4 -8.6 -
V
I
E
= -100µA
Emitter-Base Breakdown Voltage
BV
EBO
-7 -8.2 -
V
I
E
= -100µA
Collector Cutoff Current
I
CBO
- <
-1
-50
nA
V
CB
= -25V
- -
-500
V
CB
= -25V, T
A
= 100°C
Emitter Cutoff Current
I
EBO
- <
-1
-50 nA
V
EB
= -5.6V
DC current transfer Static ratio (Notes 9)
h
FE
300 450 900
-
I
C
= -100mA, V
CE
= -2V
200 290 -
I
C
= -2A, V
CE
= -2V
65 110 -
I
C
= -6A, V
CE
= -2V
- 25 -
I
C
= -15A, V
CE
= -2V
Collector-Emitter Saturation Voltage (Notes 9)
V
CE(sat)
-
-40
-47
mV
I
C
= -1A, I
B
= -100mA
-
-100 -130
I
C
= -1A, I
B
= -10mA
-
-115 -145
I
C
= -2A, I
B
= -40mA
-
-225 -275
I
C
= -6A, I
B
= -300mA
Base-Emitter Saturation Voltage (Notes 9)
V
BE(sat)
- -1000
-1100 mV
I
C
= -6A, I
B
= -300mA
Base-Emitter Turn-on Voltage (Notes 9)
V
BE(on)
- -865
-1000 mV
I
C
= -6A, V
CE
= -2V
Transitional Frequency (Notes 9)
f
T
- 176 - MHz
I
C
= -50mA, V
CE
= -10V,
f = 50MHz
Input Capacitance
C
ibo
- -
400
pF
V
EB
= -0.5V, f = 1MHz
Output capacitance
C
obo
- 36 45 pF
V
CB
= -10V, f = 1MHz
Delay time
t
d
- 23 - ns
V
CC
= -10V, I
C
= -1A,
I
B1
= -I
B2
=-50mA
Rise time
t
r
- 18.4 - ns
Storage time
t
s
- 266 - ns
Fall time
t
f
- 49.6 - ns
Notes:
9. Measured under pulsed conditions. Pulse width
≤ 300μs. Duty cycle ≤2%.