Diodes ZXTP25012EFH User Manual
Summary, Description, Features
© Zetex Semiconductors plc 2007
ZXTP25012EFH
12V, SOT23, PNP medium power transistor
Summary
BV
CEO
> -12V
h
FE
> 500
I
C(cont)
= 4A
R
CE(sat)
= 40m
⍀
V
CE(sat)
< -65mV @ 1A
P
D
= 1.25W
Complementary part number ZXTN25012EFH
Description
Advanced process capability and package design have been used to
maximise the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
Features
•
High power dissipation SOT23 package
•
High peak current
•
Very high gain, 500 minimum
•
Low saturation voltage
Applications
•
MOSFET and IGBT gate driving
•
DC - DC converters
•
Motor drive
•
High side driver
•
Line disconnect switch
Ordering information
Device marking
1E8
Device
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
ZXTP25012EFHTA
7
8
3000
C
E
B
C
E
B
Pinout - top view