Diodes ZXTP25012EFH - Manual (Page 2)

ZXTP25012EFH
Issue 2 - October 2007 2 www.zetex.com
© Zetex Semiconductors plc 2007
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs
Parameter Symbol Limit Unit
Collector-base voltage V
CBO
-12 V
Collector-emitter voltage V
CEO
-12 V
Emitter-base voltage V
EBO
-7 V
Continuous collector current (b) I
C
-4 A
Base current I
B
-1 A
Peak pulse current I
CM
-10 A
Power dissipation at T
amb
=25°C (a) P
D
0.73 W
Linear derating factor 5.84 mW/°C
Power dissipation at T
amb
=25°C (b) P
D
1.05 W
Linear derating factor 8.4 mW/°C
Power dissipation at T
amb
=25°C (c) P
D
1.25 W
Linear derating factor 9.6 mW/°C
Power dissipation at T
amb
=25°C (d) P
D
1.81 W
Linear derating factor 14.5 mW/°C
Operating and storage temperature range T
j
, T
stg
-55 to 150 °C
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient (a) R ⍜JA 171 °C/W
Junction to ambient (b) R ⍜JA 119 °C/W
Junction to ambient (c) R ⍜JA 100 °C/W
Junction to ambient (d) R
⍜JA
69 °C/W