Diodes ZXTP25012EZ User Manual

Ce b, Summary, Description

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Issue 1- December 2007

1

www.zetex.com

© Zetex Semiconductors plc 2007

ZXTP25012EZ
20V PNP high gain transistor in SOT89

Summary

BV

CEO

> -12V

h

FE

> 500

I

C(cont)

= 4.5A

V

CE(sat)

< -70mV @ 1A

R

CE(sat)

= 45m

P

D

= 2.4W

Complementary part number ZXTN25012EZ

Description

Packaged in the SOT89 outline this new low saturation 12V PNP
transistor offers extremely low on state losses making it ideal for use
in DC-DC circuits and various driving and power management
functions.

Features

4.5A continuous current

Up to 10A peak current

Very low saturation voltages

High gain

Applications

High side switch

Battery charging

Regulator circuits

Buck converters

MOSFET gate drivers

Ordering information

Device marking

1L4

Device

Reel size

(inches)

Tape width

(mm)

Quantity

per reel

ZXTP25012EZTA

7

12

1000

C

E

B

C

E

Pinout - top view

C

B

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