Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXTP25012EZ User Manual
Page 5
ZXTP25012EZ
© Zetex Semiconductors plc 2007
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-Base breakdown
voltage
BV
CBO
-12
-35
V
I
C
= -100
μA
Collector-Emitter
breakdown voltage
BV
CEO
-12
-25
V
I
C
= -10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
≤ 300µs; duty cycle ≤ 2%.
Emitter-Base breakdown
voltage
BV
EBO
-7
-8.5
V
I
E
= -100
μA
Collector-Base cut-off
current
I
CBO
<-1
-50
-0.5
nA
μA
V
CB
= -12V
V
CB
= -12V, T
amb
=100°C
Emitter Base cut-off
current
I
EBO
<-1
-50
nA
V
EB
= -5.6V
Collector-Emitter
saturation voltage
V
CE(sat)
-55
-155
-185
-200
-70
-265
-355
-285
mV
mV
mV
mV
I
C
= -1A, I
B
= -100mA
(*)
I
C
= -1A, I
B
= -10mA
(*)
I
C
= -2A, I
B
= -40mA
(*)
I
C
= -4.5A, I
B
= -450mA
(*)
Base-Emitter saturation
voltage
V
BE(sat)
-990
-1100
mV
I
C
= -4.5A, I
B
= -450mA
(*)
Base-Emitter turn-on
voltage
V
BE(on)
-865
-975
mV
I
C
= -4.5A, V
CE
= -2V
(*)
Static forward current
transfer ratio
h
FE
500
300
40
800
450
85
15
1500
I
C
= -10mA, V
CE
= -2V
(*)
I
C
= -1A, V
CE
= -2V
(*)
I
C
= -4.5A, V
CE
= -2V
(*)
I
C
= -10A, V
CE
= -2V
(*)
Transition frequency
f
T
310
MHz
I
C
= -50mA, V
CE
= -10V
f
= 100MHz
Input capacitance
C
ibo
127
250
pF
V
EB
= -0.5V, f
= 1MHz
(*)
Output capacitance
C
obo
16.9
30
pF
V
CB
= -10V, f
= 1MHz
(*)
Delay time
t
d
41
ns
V
CC
= -10V, I
C
= -1A,
I
B1
= -I
B2
= -10mA
Rise time
t
r
62
ns
Storage time
t
s
179
ns
Fall time
t
f
65
ns