Diodes ZXTP25040DFL - Manual

Issue 3 - January 2007 1 www.zetex.com
© Zetex Semiconductors plc 2007
ZXTP25040DFL
40V, SOT23, PNP low power transistor
Summary
BV
CEO
> -40V
BV
ECO
> -3V
I
C(cont)
= -1.5A
V
CE(sat)
< -115mV @ 1A
R
CE(sat)
= 82m
⍀
P
D
= 350mW
Complementary part number ZXTN25040DFL
Description
Advanced process capability has been used to achieve high current gain
hold up making this device ideal for applications requiring high pulse
currents.
Features
• High peak current
• Low saturation voltage
• 40V forward blocking voltage
Applications
• MOSFET and IGBT gate driving
• Low power DC-DC conversion
Ordering information
Device marking
1A2
Device Reel size
(inches)
Tape width
(mm)
Quantity per reel
ZXTP25040DFLTA 7 8 3,000
C
E
B
C
E
B
Pinout - top view