Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXTP25040DFL User Manual
Page 4
ZXTP25040DFL
© Zetex Semiconductors plc 2007
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit Conditions
Collector-base breakdown
voltage
BV
CBO
-45
-75
V
I
C
= -100
A
Collector-emitter breakdown
voltage (base open)
BV
CEO
-40
-65
V
I
C
= -10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
Յ
300
s; duty cycle
Յ
2%.
Emitter-collector breakdown
voltage (reverse blocking)
BV
ECO
-3
-8.7
V
I
E
= -100
A
(*)
Emitter-base breakdown
voltage
BV
EBO
-7
-8.2
V
I
E
= -100
A
Collector cut-off current
I
CBO
<-1
-50
-20
nA
A
V
CB
= -36V
V
CB
= -36V, T
amb
= 100°C
Emitter cut-off current
I
EBO
<-1
-50
nA
V
EB
= -5.6V
Collector-emitter saturation
voltage
V
CE(sat)
-75
-95
mV
I
C
= -0.5A, I
B
= -20mA
(*)
-200
-290
mV
I
C
= -1A, I
B
= -20mA
(*)
-95
-115
mV
I
C
= -1A, I
B
= -100mA
(*)
-160
-190
mV
I
C
= -1.5A, I
B
= -75mA
(*)
-245
-300
mV
I
C
= -3A, I
B
= -300mA
(*)
Base-emitter saturation
voltage
V
BE(sat)
-915
-1000
mV
I
C
= -1.5A, I
B
= -75mA
(*)
Base-emitter turn-on voltage
V
BE(on)
-825
-900
mV
I
C
= -1.5A, V
CE
= -2V
(*)
Static forward current transfer
ratio
h
FE
300
450
900
I
C
= -10mA, V
CE
= -2V
(*)
120
200
I
C
= -1.5A, V
CE
= -2V
(*)
15
40
I
C
= -3A, V
CE
= -2V
(*)
Transition frequency
f
T
270
MHz I
C
= -50mA, V
CE
= -10V
f
= 50MHz
Output capacitance
C
obo
17.4
25
pF
V
CB
= -10V, f
= 1MHz
(*)
Delay time
t
(d)
34
ns
V
CC
= -15V. I
C
= -750mA,
I
B1
= I
B2
= -15mA.
Rise time
t
(r)
41
ns
Storage time
t
(s)
266
ns
Fall time
t
(f)
53
ns