Diodes ZXTP2039F - Manual (Page 3)

ZXTP2039F
Issue 3 - August 2005 3 www.zetex.com
© Zetex Semiconductors plc 2005
Electrical characteristics (@T
AMB
= 25°C)
Parameter Symbol Min. Max. Unit Conditions
Collector-base breakdown
voltage V
(BR)CBO
-80 V I
C
=-100 ␮A
Collector-emitter breakdown
voltage V
(BR)CEV
-80 V I
C
=-1 ␮A
-0.3V < V
BE
< 1V
Collector-emitter breakdown
voltage V
(BR)CEO
-60 V
I
C
=-10mA
*
NOTES:
* Measured under pulsed conditions. Pulse width=300 ␮S. Duty cycle Յ2%
Spice parameter data is available upon request for this device
Emitter-base breakdown
voltage V
(BR)EBO
-5 V I
E
=-100 µA
Collector-emitter cut-off current I
CES
-100 nA V
CE
=-60V
Collector-base cut-off current I
CBO
-100 nA V
CB
=-60V
Emitter-base cut-off current I
EBO
-100 nA V
EB
=-4V
Static forward current transfer
ratio h
FE
100
100
80
15
300
I
C
=-1mA, V
CE
=-5V
I
C
=-500mA, V
CE
=-5V
*
I
C
=-1A, V
CE
=-5V
*
I
C
=-2A, V
CE
=-5V
*
Collector-emitter saturation
voltage V
CE(sat)
-0.2
-0.3
-0.6
V
V
V
I
C
=-100mA, I
B
=-2mA
*
I
C
=-500mA, I
B
=-50mA
*
I
C
=-1A, I
B
=-100mA
*
Base-emitter saturation voltage V
BE(sat)
-1.2 V
I
C
=-1A, I
B
=-100mA
*
Base-emitter turn-on voltage V
BE(on)
-1.0 V
I
C
=-1A, V
CE
=-5V
*
Transition frequency f
T
150 I
C
=-50mA, V
CE
=-10V
f=100MHz
Output capacitance C
obo
10 pF V
CB
=-10V, f=1MHz