Diodes ZXTP2039F - Manual (Page 4)

ZXTP2039F
Issue 3 - August 2005 4 www.zetex.com
© Zetex Semiconductors plc 2005
Typical characteristics
V
CE(
sa
t)
-(V
)
10A 1A 10mA 100mA 1mA
-55 °C
+25 °C
+100 °C
I C /I B =10
V CE(sat) v I
C
I C -Collector Current
I C -Collector Current
V BE(sat) v I
C
V
BE(
sa
t)
- (V)
0
0.2
100mA 10mA
0.4
0.6
0.8
1.0
10A 1A
h FE V I C
I C -Collector Current
1mA 100mA 10mA 10A 1A
h
FE
- T
y
p
ica
l Ga
in
100
0
300
200
400
10mA
1mA
I C -Collector Current
V BE(on) v I C
100mA 1A 10A
V
BE
(o
n
)
- (V)
0.6
0.8
1.0
1.2
0.4
0.2
0
I C -Collector Current
V CE(sat) v I C
V
CE
(s
at)
-(V)
1mA
0
0.1
100mA 10mA
+25 ° C
0.2
0.3
0.4
0.5
I C /I B =10
10A 1A
+100 °C
-55 °C
+25 °C
+100 °C
-55 °C
+25 °C
-55 °C
+25 °C
+100 °C
I C /I B =10 V CE =5V
V CE =5V
I C
-C
olle
c
tor Current
(A)
10
1
0.1
Safe Operating Area
V CE - Collector Emitter Voltage (V)
0.1V 10V 100V
1s
DC
100ms
10ms
100us
1ms
1V
0
1mA
0.01
I C /I B =50
0.6
0.1
0.2
0.3
0.4
0.5
0.6