Diodes ZXTP4003G - Manual (Page 2)

ZXTP4003G
Datasheet Number: DS35459 Rev 1 - 2
2 of 5
www.diodes.com
December 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTP4003G
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
-100 V
Collector-Emitter Voltage V
CEO
-100 V
Emitter-Base Voltage V EBO
-7 V
Continuous Collector Current I
C
-1 A
Peak Pulse Current (Note 4) I
CM
-3 A
Base Current I B
-500 mA
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 3) P
D
2 W
Thermal Resistance, Junction to Ambient (Note 3) R θJA 62.5 °C/W
Thermal Resistance, Junction to Leads (Note 5) R θJL 28.75 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Notes: 3. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions
4. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle
≤ 2%.
5. Thermal resistance from junction to solder-point (on the exposed collector pad).
Thermal Characteristics and Derating Information
0 20 40 60 80 100 120 140 160
0.0
0.4
0.8
1.2
1.6
2.0
Derating Curve
Temperature (°C)
M
a
x P
o
we
r
Di
ssi
p
a
ti
o
n
(
W
)
100µ 1m 10m 100m 1 10 100 1k
0
10
20
30
40
50
60
70
T
amb
=25°C
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
T
he
rm
al
Res
is
tance
(°
C/
W)
Pulse Width (s)
100µ 1m 10m 100m 1 10 100 1k
1
10
100
Single Pulse
T
amb
=25°C
Pulse Power Dissipation
Pulse Width (s)
Ma
x
imu
m
Po
w
e
r (
W
)