Diodes ZXTP4003G - Manual (Page 3)

ZXTP4003G
Datasheet Number: DS35459 Rev 1 - 2
3 of 5
www.diodes.com
December 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTP4003G
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Emitter Breakdown Voltage (Note 6) BV
CEO
-100 -170 - V I
C
= -10mA
Collector Cut-off Current I
CBO
- - -50 nA V
CB
= -100V
Emitter Cut-off Current I EBO
- - -50 nA V EB = -7V
Static Forward Current Transfer Ratio (Note 6) h
FE
60
100
133
112 -
-
-
I
C
= -85mA, V
CE
= -0.15V
I
C
= -150mA, V
CE
= -0.2V
Base-Emitter Turn-On Voltage (Note 6) V
BE(on)
- -0.71 -0.95 V I
C
= -150mA, V
CE
= -0.2V
Delay Time t
(d)
- 378 - ns
V CC = -80V, I C = -150mA,
-I
B2
= 1.5mA, V
CE(ON)
= -0.2V
Rise Time t
(r)
- 388 - ns
Storage Time t
(s)
- 1348 - ns
Fall Time t (f)
- 382 - ns
Storage Time t
(s)
- 75 - ns V CC = -80V, I C = -150mA,
-I B2 = 1.5mA, V CE(ON) = -4V Fall Time t
(f)
- 363 - ns
Notes: 6. Measured under pulsed conditions. Pulse width = 300 µs. Duty cycle ≤ 2%
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
100µ 1m 10m 100m 1
0
100
200
300
400
500
100µ 1m 10m 100m 1
0.2
0.4
0.6
0.8
1.0
100m 1 10 100
0
10
20
30
40
50
Ty
p
ic
a
l Ga
in
(
h
FE
)
125°C
h
FE
v I
C
V
CE
= -0.2V
-55°C
25°C
85°C
-I
C
Collector Current (A)
125°C
V
BE(on)
v I
C
V
CE
= -0.2V
85°C
25°C
-55°C
-V
BE
(o
n
)
(V
)
-I
C
Collector Current (A)
Capacitance v Voltage
f = 1MHz
Cobo
Capa
c
it
anc
e (pF
)
-Voltage(V)