Diodes MMDT5451 - Manual (Page 2)

DS30171 Rev. 9 - 2 2 of 5
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MMDT5451
© Diodes Incorporated
Electrical Characteristics, NPN 5551 Section
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
V
(BR)CBO
180 ⎯ V I
C
= 100 μA, I
E
= 0
Collector-Emitter Breakdown Voltage V
(BR)CEO
160 ⎯ V I
C
= 1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage V
(BR)EBO
6.0 ⎯ V I
E
= 10 μA, I
C
= 0
Collector Cutoff Current I
CBO
⎯ 50
nA
μA V
CB
= 120V, I
E
= 0
V
CB
= 120V, I
E
= 0, T
A
= 100 °C
Emitter Cutoff Current I
EBO
⎯ 50 nA V
EB
= 4.0V, I
C
= 0
ON CHARACTERISTICS (Note 6)
DC Current Gain h
FE
80
80
30 ⎯
250
⎯
⎯
I
C
= 1.0mA, V
CE
= 5.0V
I
C
= 10mA, V
CE
= 5.0V
I
C
= 50mA, V
CE
= 5.0V
Collector-Emitter Saturation Voltage V
CE(SAT)
⎯
0.15
0.20
V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage V
BE(SAT)
⎯ 1.0 V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯ 6.0 pF V
CB
= 10V, f = 1.0MHz, I
E
= 0
Small Signal Current Gain h
fe
50 250 ⎯
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product f
T
100 300 MHz V CE
= 10V, I
C
= 10mA,
f = 100MHz
Noise Figure NF ⎯ 8.0 dB
V
CE
= 5.0V, I
C
= 200 μA,
R
S
= 1.0k Ω, f = 1.0kHz
Electrical Characteristics, PNP 5401 Section
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
V
(BR)CBO
-160 ⎯ V I
C
= -100 μA, I
E
= 0
Collector-Emitter Breakdown Voltage V
(BR)CEO
-150 ⎯ V I
C
= -1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage V
(BR)EBO
-5.0 ⎯ V I
E
= -10 μA, I
C
= 0
Collector Cutoff Current I
CBO
⎯ -50
nA
μA V
CB
= -120V, I
E
= 0
V
CB
= -120V, I
E
= 0, T
A
= 100 °C
Emitter Cutoff Current I
EBO
⎯ -50 nA V
EB
= -3.0V, I
C
= 0
ON CHARACTERISTICS (Note 6)
DC Current Gain h
FE
50
60
50 ⎯
240
⎯
⎯
I
C
= -1.0mA, V
CE
= -5.0V
I
C
= -10mA, V
CE
= -5.0V
I
C
= -50mA, V
CE
= -5.0V
Collector-Emitter Saturation Voltage V
CE(SAT)
⎯
-0.2
-0.5
V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
Base-Emitter Saturation Voltage V
BE(SAT)
⎯ -1.0 V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯ 6.0 pF V
CB
= -10V, f = 1.0MHz, I
E
= 0
Small Signal Current Gain h
fe
40 200 ⎯
V
CE
= -10V, I
C
= -1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product f
T
100 300 MHz V CE
= -10V, I
C
= -10mA,
f = 100MHz
Noise Figure NF ⎯ 8.0 dB
V
CE
= -5.0V, I
C
= -200 μA,
R
S
= 10 Ω, f = 1.0kHz
Notes: 6. Short duration pulse test used to minimize self-heating effect.