Diodes MMBTA28 - Manual (Page 2)

MMBTA28
Document number: DS30367 Rev. 10 - 2
2 of 6
www.diodes.com
February 2014
© Diodes Incorporated
MMBTA28
A Product Line of
Diodes Incorporated
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
80 V
Collector-Emitter Voltage V
CES
80 V
Emitter-Base Voltage V
EBO
12 V
Continuous Collector Current I
C
500 mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation
(Note 5)
P
D
310
mW
(Note 6) 350
Thermal Resistance, Junction to Ambient
(Note 5)
R
θJA
403
C/W
(Note 6) 357
Thermal Resistance, Junction to Leads (Note 7) R
θJL
350 C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 C
Notes: 5. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
6. Same as note (5), except the device is mounted on 15 mm x 15mm 1oz copper.
7. Thermal resistance from junction to solder-point (at the end of the leads).
0 25 50 75 100 125 150
0.0
0.1
0.2
0.3
0.4
Derating Curve
Temperature (°C)
M
a
x P
ower Diss
ipat
ion (W)
100µ 1m 10m 100m 1 10 100 1k
0
50
100
150
200
250
300
350
400
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
T
herm
a
l Resist
ance (°
C/
W)
Pulse Width (s)
10m 100m 1 10 100 1k
0.1
1
10
Single Pulse. T
amb
=25°C
Pulse Power Dissipation
Pulse Width (s)
M
a
x
P
o
we
r Di
ss
ipat
ion (W)