Diodes MMBTA28 - Manual (Page 3)

MMBTA28
Document number: DS30367 Rev. 10 - 2
3 of 6
www.diodes.com
February 2014
© Diodes Incorporated
MMBTA28
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
80 — — V I
C
= 100µA, I
E
= 0
Collector-Emitter Breakdown Voltage (Note 8) BV
CES
80 — — V I
C
= 100µA, V
BE
= 0
Emitter-Base Breakdown Voltage BV
EBO
12 — — V I
E
= 100µA, I
C
= 0
Collector cut-off current
I
CBO
— — 100 nA V
CB
= 60V, I
E
= 0
I
CES
— — 500 nA V
CE
= 60V, V
BE
= 0
Emitter-base Cut-off Current I
EBO
— — 100 nA V
EB
= 10V, I
C
= 0
ON CHARACTERISTICS (Note 8)
Static Forward Current Transfer Ratio h
FE
10,000
10,000
— — —
I
C
= 10mA, V
CE
= 5V
I
C
= 100mA, V
CE
= 5V
Collector-Emitter Saturation Voltage V
CE(sat)
— —
1.2
1.5
V
I
C
= 10mA, I
B
= 10µA
I
C
= 100mA, I
B
= 100µA
Base-Emitter Turn-On Voltage V
BE(on)
— — 2.0 V I
C
= 100mA, V
CE
= 5V
SMALL SIGNAL CHARACTERISTICS (Note 8)
Current Gain-Bandwidth Product f
T
125 — — MHz
I
C
= 10mA, V
CE
= 5V,
f = 100MHz
Output Capacitance C
obo
— 8.0 — pF V
CB
= 10V, f = 1MHz, I
E
= 0
Input Capacitance C
ibo
— 15.0 — pF V
EB
= 0.5V, f = 1MHz, I
C
= 0
Note: 8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%