Diodes ZXTPS720MC - Manual (Page 2)

ZXTPS720MC
Document Number DS31938 Rev. 3 - 2
2 of 10
www.diodes.com
April 2011
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A Product Line of
Diodes Incorporated
ZXTPS720MC
PNP - Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Parameter Symbol Limit Unit
Collector-Base Voltage V CBO
-50
V Collector-Emitter Voltage V
CEO
-40
Emitter-Base Voltage V
EBO
-7
Peak Pulse Current I CM
-4
A Continuous Collector Current
(Notes 4 and 7)
I
C
-3
(Notes 5 and 7) -3.4
Base Current I
B
-1
PNP - Thermal Characteristics
@ T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation
Linear Derating Factor
(Notes 4 & 7)
P
D
1.5
12
W
mW/ °C
(Notes 5 & 7)
2.45
19.6
(Notes 6 & 7)
1.13
8
(Notes 6 & 8)
1.7
13.6
Thermal Resistance, Junction to Ambient
(Notes 4 & 7)
R θJA
83.3
°C/W
(Notes 5 & 7) 51.0
(Notes 6 & 7) 111
(Notes 6 & 8) 73.5
Thermal Resistance, Junction to Lead (Note 9) R θJL 17.1
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150
°C
Notes: 4. For a dual device surface mounted on 28mm x 28mm (8cm 2 ) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device
is measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector and cathode pads connected to each half.
5. Same as note (4), except the device is measured at t <5 sec.
6. Same as note (4), except the device is surface mounted on 31mm x 31mm (10cm
2 ) FR4 PCB with high coverage of single sided 1oz copper.
7. For a dual device with one active die.
8. For dual device with 2 active die running at equal power.
9. Thermal resistance from junction to solder-point (on the exposed collector pad).