Cypress CY62148E User Manual

Page 10

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CY62148E MoBL

®

Document #: 38-05442 Rev. *F

Page 10 of 10

Document History Page

Document Title: CY62148E MoBL

®

, 4-Mbit (512K x 8) Static RAM

Document Number: 38-05442

REV.

ECN NO.

Issue

Date

Orig. of

Change

Description of Change

**

201580

01/08/04

AJU

New Data Sheet

*A

249276

See ECN

SYT

Changed from Advance Information to Preliminary

Moved Product Portfolio to Page 2

Added RTSOP II and Removed FBGA Package

Changed V

CC

stabilization time in footnote #7 from 100

µs to 200 µs

Changed I

CCDR

from 2.0

µA to 2.5 µA

Changed typo in Data Retention Characteristics(t

R

) from 100

µs to t

RC

ns

Changed t

OHA

from 6 ns to 10 ns for both 35 ns and 45 ns Speed Bin

Changed t

HZOE

, t

HZWE

from 12 to 15 ns for 35 ns Speed Bin and 15 to 18 ns for 45

ns Speed Bin

Changed t

SCE

from 25 to 30 ns for 35 ns Speed Bin and 40 to 35 ns for 45 ns Speed

Bin

Changed t

HZCE

from 12 to18 ns for 35 ns Speed Bin and 15 to 22 ns for 45 ns

Speed Bin

Changed t

SD

from 15 to 18 ns for 35 ns Speed Bin and 20 to 22 ns for

45 ns Speed Bin

Changed t

DOE

from 15 to 18 ns for 35 ns Speed Bin

Corrected typo in Package Name

Changed Ordering Information to include Pb-Free Packages

*B

414820

See ECN

ZSD

Changed from Preliminary to Final

Changed the address of Cypress Semiconductor Corporation on Page #1 from

“3901 North First Street” to “198 Champion Court”

Removed 35ns Speed Bin

Removed “L” version of CY62148E

Changed I

CC

(Typ) value from 1.5 mA to 2 mA at f=1 MHz

Changed I

CC

(Max) value from 2 mA to 2.5 mA at f=1 MHz

Changed I

CC

(Typ) value from 12 mA to 15 mA at f=f

max

Removed I

SB1

spec from the Electrical characteristics table

Changed I

SB2

Typ values from 0.7

µA to 1 µA and Max values from 2.5 µA to 7 µA

Modified footnote #4 to include current limit

Removed redundant footnote on DNU pins

Changed the AC testload capacitance from 100 pF to 30 pF on page #4

Changed test load parameters R1, R2, R

TH

and V

TH

from 1838

Ω, 994 Ω,

645

Ω and 1.75V to 1800 Ω, 990 Ω, 639 Ω and 1.77V

Changed I

CCDR

from 2.5

µA to 7 µA

Added I

CCDR

typical value

Changed t

LZOE

from 3 ns to 5 ns

Changed t

LZCE

and t

LZWE

from 6 ns to 10 ns

Changed t

HZCE

from 22 ns to 18 ns

Changed t

PWE

from 30 ns to 35 ns

Changed t

SD

from 22 ns to 25 ns

Updated the ordering information table and replaced Package Name column with

Package Diagram

*C

464503

See ECN

NXR

Included Automotive Range in product offering

Updated the Ordering Information

*D

485639

See ECN

VKN

Corrected the operating range to 4.5V - 5.5V on page# 3

*E

833080

See ECN

VKN

Added footnote #8

Added V

IL

spec for SOIC package

*F

890962

See ECN

VKN

Added Automotive-A part and its related information

Removed Automotive-E part and its related information

Added footnote #2 related to SOIC package

Added footnote #9 related to I

SB2

Added AC values for 55 ns Industrial-SOIC range

Updated Ordering Information table

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