Compaq 4000N User Manual

Page 40

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Chapter 3 Processor/Memory Subsystem

Compaq Deskpro 4000N and 4000S Personal Computers

First Edition - September 1997

3-6

Table 3–5. SPD Address Map (SDRAM DIMM)

Table 3-5.

SPD Address Map (SDRAM DIMM)

Byte

Description

Notes

Byte

Description

Notes

0

No. of Bytes Written Into EEPROM

[1]

62

SPD Revision

[7]

1

Total Bytes (#) In EEPROM

[2]

63

Checksum Bytes 0-62

2

Memory Type

64-71

JEP-106E ID Code

[8]

3

No. of Row Addresses On DIMM

[3]

72

DIMM OEM Location

[8]

4

No. of Column Addresses On DIMM

73-90

OEM’s Part Number

[8]

5

No. of Module Banks On DIMM

91, 92

OEM’s Rev. Code

[8]

6, 7

Data Width of Module

93, 94

Manufacture Date

[8]

8

Voltage Interface Standard of DIMM

95-98

OEM’s Assembly S/N

[8]

9

Cycletime @ Max CAS Latency (CL)

[4]

99-125

OEM Specific Data

[8]

10

Access From Clock

[4]

126, 127

Reserved

11

Config. Type (Parity, Nonparity, etc.)

128-135

Sys. Integrator’s ID

[9]

12

Refresh Rate/Type

[4] [5]

136-150

Sys. Integrator’s P/N

[9]

13

Width, Primary DRAM

151-152

Sys. Integrator’s D/C

[9]

14

Error Checking Data Width

153-165

Sys. Integrator’s S/N

[9]

15

Min. Clock Delay

[6]

166

Chksm Bytes 128-165

[9]

16

Burst Lengths Supported

167-189

Top Level Sys. S/N

[9]

17

No. of Banks For Each Mem. Device

[4]

190-221

Avaiable for use

[9]

18

CAS Latencies Supported

[4]

222

Chksm Bytes 167-221

[9]

19

CS# Latency

[4]

223-253

Available for use

[9]

20

Write Latency

[4]

254

Chksm Bytes 223-253

[9]

21

DIMM Attributes

255

Chksm Byes 0-128

[9]

22

Memory Device Attributes

23

Min. Clock Cycle Time at CL X-1

[7]

24

Max. Acc. Time From CLK at CL X-1

[7]

25

Min. Clock Cycle Time at CL X-2

[7]

26

Max. Acc. Time From CLK at CL X-2

[7]

27

Min. Row Precharge Time

[7]

28

Min. Row Active To Row Active Delay

[7]

29

Min. RAS to CAS Delay

[7]

30, 31

Reserved

32..61

Superset Data For Future Use

NOTES:

[1] Programmed as 128 bytes by the DIMM’s OEM
[2] Must be programmed to 256 bytes.
[3] High order bit defines redundant addressing: if set (1), highest order RAS# address must be
re-sent as highest order CAS# address.
[4] Refer to memory manufacturer’s datasheet
[5] MSb is Self Refresh flag. If set (1), assembly supports self refresh.
[6] Back-to-back random column addresses.
[7] Field format proposed to JEDEC but not defined as standard at publication time.
[8] Field specified as optional by JEDEC but required by this system.
[9] Field format proposed to JEDEC. This system requires that the DIMM’s EEPROM have this
space available for reads/writes.

Access to the DIMM’s EEPROM is through an I

2

C-type bus interface using BIOS call INT 15,

AX-E827h (discussed in Chapter 8, “BIOS ROM”).

If the BIOS finds an installed module that is not supported then the memory controller is
programmed to indicate empty rows as appropriate.

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