Power sequencing on wake events, Gating of intel® ck-815 to vttpwrgd, Gating of intel – Intel 815 User Manual

Page 41: Ck-815 to vttpwrgd, Figure 17. gating power to intel, Ck-815, 3 power sequencing on wake events, 1 gating of intel

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Universal Socket 370 Design

R

Intel

®

815 Chipset Platform Design Guide

41

4.3

Power Sequencing on Wake Events

In addition to the mechanism for identifying the processor in the socket, special handling of wake
events is required for the Intel 815 chipset platform that support functionality of the future
0.13 micron socket 370 processors. When a wake event is triggered, the GMCH and the Intel
CK-815 must not sample BSEL[1:0] until the signal VTTPWRGD is asserted. This is handled by
setting up the following sequence of events:

1. Power is not connected to the Intel CK-815-compliant clock driver until VTTPWRGD12 is

asserted.

2. Clocks to the ICH stabilize before the power supply asserts PWROK to the ICH. There is no

guarantee this will occur as the implementation for the previous step relies on the 12V supply.
Thus, it is necessary to gate PWROK to the ICH from the power supply while the Intel
CK-815 is given sufficient time for the clocks to become stable. The amount of time required
is a minimum 20 ms.

3. ICH takes the GMCH out of reset.

4. GMCH samples BSEL[1:0]. Intel CK-815 will have sampled BSEL[1:0] much earlier.

4.3.1

Gating of Intel

®

CK-815 to VTTPWRGD

System designers must ensure that the VTTPWRGD signal is asserted before the Intel CK-815-
compliant clock driver receives power. This is handled by having the 3.3V rail of the clock driver
gated by the VTTPWRGD12 reference schematic signal. Unlike previous Intel 815 chipset
designs, the 3.3V standby rail is not used to power the clock as the VTTPWRGD12 reference
schematic signal will cut power to the clock when going into any sleep state. Refer to Figure 17 for
an example implementation.

Figure 17. Gating Power to Intel

®

CK-815

VCC3_3

VDD on CK-815

VTTPW RGD12

MOSFET N

Note:

The FET m ust have no m ore than

100 m illiohm s resistance between the
source and the drain.

Gating_Pwr

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