Hexfred, Ultrafast soft recovery diode, 90 a, Vishay semiconductors – C&H Technology VS-HFA90FA120 User Manual

Page 2

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VS-HFA90FA120

www.vishay.com

Vishay Semiconductors

Revision: 29-Feb-12

1

Document Number: 94690

For technical questions within your region:

[email protected]

,

[email protected]

,

[email protected]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

HEXFRED

®

Ultrafast Soft Recovery Diode, 90 A

FEATURES

• Fast recovery time characteristic

• Electrically isolated base plate

• Large creepage distance between terminal

• Simplified mechanical designs, rapid assembly

• Compliant to RoHS Directive 2011/65/EU

• Designed and qualified for industrial level

DESCRIPTION/APPLICATIONS

The dual diode series configuration (VS-HFA90FA120) is
used for output rectification or freewheeling/clamping
operation and high voltage application.
The semiconductor in the SOT-227 Gen II package is
isolated from the copper base plate, allowing for common
heatsinks and compact assemblies to be built.
These modules are intended for general applications such
as HV power supplies, electronic welders, motor control and
inverters.

PRODUCT SUMMARY

V

R

1200 V

V

F

(typical)

2.46 V

t

rr

(typical)

35 ns

I

F(AV)

per module at T

C

90 A at 63 °C

SOT-227

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL

TEST

CONDITIONS

MAX.

UNITS

Cathode to anode breakdown voltage

V

R

1200

V

Continuous forward current, per leg

I

F

T

C

= 83 °C

45

A

Single pulse forward current, per leg

I

FSM

T

J

= 25 °C

400

Maximum power dissipation, per leg

P

D

T

C

= 83 °C

139

W

T

C

= 100 °C

104

RMS isolation voltage

V

ISOL

Any terminal to case, t = 1 min

2500

V

Operating junction and storage
temperature range

T

J

, T

Stg

- 55 to 150

°C

ELECTRICAL SPECIFICATIONS (T

J

= 25 °C unless otherwise specified)

PARAMETER SYMBOL

TEST

CONDITIONS MIN.

TYP.

MAX.

UNITS

Cathode to anode
breakdown voltage

V

BR

I

R

= 100 μA

1200

-

-

V

Forward voltage

V

FM

I

F

= 25 A

See fig. 1

-

2.46

3.0

I

F

= 40 A

-

2.68

3.3

I

F

= 25 A, T

J

= 125 °C

-

2.22

-

I

F

= 40 A, T

J

= 125 °C

-

2.52

-

I

F

= 25 A, T

J

= 150 °C

-

2.12

2.55

I

F

= 40 A, T

J

= 150 °C

-

2.43

2.96

Reverse leakage current

I

RM

V

R

= V

R

rated

See fig. 2

-

1.5

75

μA

T

J

= 125 °C, V

R

= V

R

rated

-

0.5

2

mA

T

J

= 150 °C, V

R

= V

R

rated

-

2

5

Junction capacitance

C

T

V

R

= 1200 V

See fig. 3

-

30

-

pF

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