C&H Technology VS-HFA90FA120 - Manual (Page 5)

VS-HFA90FA120
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Vishay Semiconductors
Revision: 29-Feb-12 4 Document Number: 94690
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Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Fig. 9 - Typical Reverse Recovery Current vs. dI
F
/dt
Fig. 10 - Reverse Recovery Parameter Test Circuit
t rr
(ns)
dI
F
/dt (A/μs)
0
50
100
150
200
100 1000
125 °C
25 °C
I
F
= 40 A
I
F
= 20 A
V
R
= 200 V
Q
rr
(nC)
dI
F
/dt (A/μs)
0
250
500
750
1000
1250
1500
100 1000
25 °C
I
F
= 40 A
I
F
= 20 A
V
R
= 200 V
125 °C
dI
F
/dt (A/μs)
I RR
(A)
0
10
20
30
100 1000
25 °C
I
F
= 40 A
V
R
= 200 V
125 °C
I
F
= 20 A
IRFP250
D.U.T.
L = 70 μH
V
R
= 200 V
0.01 Ω
G
D
S
dI
F
/dt
adjust