Vishay semiconductors, Ordering information table circuit configuration – C&H Technology VS-HFA90FA120 User Manual
Page 6
VS-HFA90FA120
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Vishay Semiconductors
Revision: 29-Feb-12
5
Document Number: 94690
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Fig. 11 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
2 separate diodes,
parallel pin-out
F
Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dI
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area under curve defined by t
rr
and I
RRM
t
rr
x I
RRM
2
Q
rr
=
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
1
2
3
4
5
6
Device code
5
1
3
2
4
6
7
HF
VS-
A
90
F
A
120
-
HEXFRED
®
family
-
Process designator (A = Electron irradiated)
-
Average current (90 = 90 A)
-
Circuit configuration (2 separate diodes, parallel pin-out)
-
Package indicator (SOT-227 standard isolated base)
-
Voltage rating (120 = 1200 V)
7
-
Vishay Semiconductors product
1
4
3
2
Lead Assignment
1
4
2
3