Vishay semiconductors, Dynamic recovery characteristics (t, 25 °c unless otherwise specified) – C&H Technology VS-HFA90FA120 User Manual
Page 3: Thermal - mechanical specifications
VS-HFA90FA120
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Vishay Semiconductors
Revision: 29-Feb-12
2
Document Number: 94690
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Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Leg)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL
TEST
CONDITIONS MIN.
TYP.
MAX.
UNITS
Reverse recovery time
t
rr
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V
-
35
-
ns
T
J
= 25 °C
I
F
= 40 A
dI
F
/dt = - 200 A/μs
V
R
= 200 V
-
80
-
T
J
= 125 °C
-
130
-
Peak recovery current
I
RRM
T
J
= 25 °C
-
6.8
-
A
T
J
= 125 °C
-
11.5
-
Reverse recovery charge
Q
rr
T
J
= 25 °C
-
270
-
nC
T
J
= 125 °C
-
740
-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Junction to case, single leg conducting
R
thJC
-
-
0.48
°C/W
Junction to case, both legs conducting
-
-
0.24
Case to heatsink
R
thCS
Flat, greased and surface
-
0.10
-
Weight
-
30
-
g
Mounting torque
-
1.3
-
Nm
V
F
-
Forward Voltage Drop (V)
I
F
- Instantaneous Forwar
d
Curr
ent (A)
1
10
100
1000
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
T
J
=
150 °C
T
J
=
125 °C
T
J
=
25 °C
V
R
-
Reverse Voltage (V)
I
R
- Reverse Current (μA)
0.01
0.1
1
10
100
1000
10 000
0
100
200
300
400
500
600
T
J
=
150 °C
T
J
=
125 °C
T
J
=
25 °C