Vishay semiconductors, Preliminary, Electrical specifications (t – C&H Technology VS-GT250TX120U User Manual
Page 3: 25 °c unless otherwise specified), Internal ntc - thermistor specifications
Preliminary
VS-GT250TX120U
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Vishay Semiconductors
Revision: 08-Jul-13
2
Document Number: 93618
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ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL
TEST
CONDITIONS
MIN.
TYP.
MAX.
UNITS
Collector to emitter breakdown voltage
V
BR(CES)
V
GE
= 0 V, I
C
= 500 μA
1200
-
-
V
Breakdown voltage
temperature coefficient
V
(BR)CES
/
T
J
Reference to 25 °C, I
C
= 1 mA
-
n/a
-
V/°C
Collector to emitter voltage
V
CE(on)
V
GE
= 15 V, I
C
= 250 A
-
2.42
-
V
V
GE
= 15 V, I
C
= 250 A, T
J
= 125 °C
-
2.82
-
Gate threshold voltage
V
GE(th)
V
CE
= V
GE
, I
C
= 1.0 mA
-
3.5
-
V
Forward transconductance
g
fe
V
CE
= 20 V, I
C
= 250 A
-
275
-
S
Collector to emitter leakage current
I
CES
V
GE
= 0 V, V
CE
= 1200 V
-
0.04
-
mA
V
GE
= 0 V, V
CE
= 1200 V, T
J
= 125 °C
-
2.9
-
Gate to emitter leakage current
I
GES
V
GE
= ± 30 V
-
-
± 600
nA
Total gate charge (turn-on)
Q
g
I
C
= 250 A
V
CE
= 600 V
V
GE
= 15 V
-
1200
-
nC
Gate to emitter charge (turn-on)
Q
ge
-
360
-
Gate to collector charge (turn-on)
Q
gc
-
510
-
Turn-on switching loss
E
on
I
C
= 250 A, V
CC
= 600 V, V
GE
= 15 V,
R
g
= 3.3
, L = 500 μH, T
J
= 25 °C
-
15.5
-
mJ
Turn-off switching loss
E
off
-
14.8
-
Turn-on switching loss
E
on
V
CC
= 600 V, T
J
= 125 °C
I
C
= 250 A
R
g
= 3.3
, L = 500 μH
V
GE
= 15 V
-
22.4
-
Turn-off switching loss
E
off
-
17.7
-
Turn-on delay time
t
d(on)
-
425
-
ns
Rise time
t
r
-
112
-
Turn-off delay time
t
d(off)
-
436
-
Fall time
t
f
-
138
-
Input capacitance
C
iss
V
GE
= 0 V
V
CE
= 30 V
f = 1.0 MHz
-
3.0
-
nF
Output capacitance
C
oss
-
1.0
-
Reverse transfer capacitance
C
rss
-
0.7
-
Forward voltage
V
F
I
F
= 250 A
-
2.27
-
V
I
F
= 250 A, T
J
= 125 °C
-
2.42
-
Reverse recovery time
t
rr
I
F
= 250 A, R
g
= 3.3
, L = 500 μH,
V
R
= 600 V
-
170
-
ns
I
F
= 250 A, R
g
= 3.3
, L = 500 μH,
V
R
= 600 V, T
J
= 125 °C
-
371
-
Reverse recovery charge
Q
rr
I
F
= 250 A, R
g
= 3.3
, L = 500 μH,
V
R
= 600 V
-
12.1
-
μC
I
F
= 250 A, R
g
= 3.3
, L = 500 μH,
V
R
= 600 V, T
J
= 125 °C
-
29.1
-
Junction capacitance
C
T
V
R
= 1200 V
-
n/a
-
pF
INTERNAL NTC - THERMISTOR SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
TYP.
UNITS
Resistance
R
25
T
J
= 25 °C
5000 ± 5 %
Resistance
R
125
T
J
= 125 °C
493 ± 5 %
B-constant
B
R
2
= R
1
e
[B(1/T2 - 1/T1)]
3.375 ± 5 %
K
Temperature range
- 40 to 125
°C
Maximum operating temperature
220
Dissipation constant
2
mW/°C
Thermal time constant
8
s