C&H Technology VS-GT250TX120U - Manual (Page 5)

Preliminary
VS-GT250TX120U
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Vishay Semiconductors
Revision: 08-Jul-13 4 Document Number: 93618
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Fig. 5 - Typical IGBT Transfer Characteristics
Fig. 6 - Typical IGBT Gate Threshold Voltage
Fig. 7 - Typical IGBT Zero Gate Voltage Collector Current
Fig. 8 - Typical Diode Forward Characteristics
Fig. 9 - Maximum DC Forward Current vs. Case Temperature
Fig. 10 - Typical IGBT Energy loss vs. I
C
,
T
J
= 125 °C, V
CC
= 600 V, R
g
= 3.3 , V
GE
= 15 V, L = 500 μH
V
GE
(V)
I C
(A)
0
50
100
150
200
250
300
350
400
450
500
4 5 6 7 8 9 10 11 12
V
CE
= 20 V
T
J
= 25 °C
T
J
= 125 °C
V
G
Eth
(V)
I
C
(mA)
2.5
3
3.5
4
4.5
5
5.5
6
6.5
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10
T
J
= 25 °C
T
J
= 125 °C
V
CES
(V)
I CE
S
(mA)
0.0001
0.001
0.01
0.1
1
10
100
100 200 300 400 500 600 700 800 900 1000 1100 1200 1300
T
J
= 25 °C
T
J
= 125 °C
T
J
= 150 °C
T
J
= 175 °C
V
FM
(V)
I F
(A)
0
50
100
150
200
250
300
350
400
450
500
0 0.5 1 1.5 2 2.5 3 3.5 4
T
J
= 25 °C
T
J
= 150 °C
T
J
= 175 °C
T
J
= 125 °C
0
20
40
60
80
100
120
140
160
180
0 40 80 120 160 200 240 280 320 360 400
I
F
- Continuous Forward Current (A)
Allowable Case Temperature (°C)
I
C
(A)
Ener
g
y (mJ)
0
5
10
15
20
25
0 50 100 150 200 250 300
E
on
E
off