Vishay semiconductors, Preliminary – C&H Technology VS-GT250TX120U User Manual

Page 6

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Preliminary

VS-GT250TX120U

www.vishay.com

Vishay Semiconductors

Revision: 08-Jul-13

5

Document Number: 93618

For technical questions within your region:

[email protected]

,

[email protected]

,

[email protected]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Fig. 11 - Typical IGBT Switching Time vs. I

C

,

T

J

= 125 °C, V

CC

= 600 V, R

g

= 3.3

, V

GE

= 15 V, L = 500 μH

Fig. 12 - Maximum Thermal Impedance Z

thJC

Characteristics (IGBT)

Fig. 13 - Maximum Thermal Impedance Z

thJC

Characteristics (DIODE)

S

witchin

g

Time (ns)

I

C

(A)

10

100

1000

0

50

100

150

200

250

300

t

d(off)

t

d(on)

t

f

t

r

t

1

-

Rectangular Pulse Duration (s)

Z

thJC

-

Thermal Impe

d

ance

Junction to Case (°C/W)

0.001

0.01

0.1

1

0.00001

0.0001

0.001

0.01

0.1

1

10

D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
DC

t

1

-

Rectangular Pulse Duration (s)

Z

thJC

-

Thermal Impe

d

ance

Junction to Case (°C/W)

0.0001

0.001

0.01

0.1

1

0.00001

0.0001

0.001

0.01

0.1

1

10

D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
DC

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