Vishay semiconductors, Preliminary – C&H Technology VS-GT250TX120U User Manual
Page 7
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Preliminary
VS-GT250TX120U
www.vishay.com
Vishay Semiconductors
Revision: 08-Jul-13
6
Document Number: 93618
For technical questions within your region:
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
Half-bridge with thermistor
T
1
-
Insulated Gate Bipolar Transistor (IGBT)
-
Vishay Semiconductors product
2
-
T = Trench IGBT technology
3
-
Current rating (250 = 250 A)
4
-
T = Half-bridge
5
-
Package indicator (X-MAP)
6
-
Voltage rating (120 = 1200 V)
7
-
U = Ultrafast
8
Device code
5
1
3
2
4
6
7
8
G
VS-
T
250
T
X
120
U
NTC
1
7
8
6
5
10
11
Q1
Q2
D1
D2
2
4
3
9
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