Vishay semiconductors, Electrical specifications (t, Switching characteristics (t – C&H Technology VS-GT300FD060N User Manual
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VS-GT300FD060N
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Vishay Semiconductors
Revision: 15-Oct-12
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Document Number: 93569
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ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Q1 - Q2 - Q3 - Q4 TRENCH IGBT
Collector to emitter breakdown voltage
BV
CES
V
GE
= 0 V, I
C
= 500 μA
600
-
-
V
Collector to emitter voltage
V
CE(ON)
V
GE
= 15 V, I
C
= 300 A
-
1.72
2.5
V
GE
= 15 V, I
C
= 300 A, T
J
= 125 °C
-
1.93
-
Gate threshold voltage
V
GE(th)
V
CE
= V
GE
, I
C
= 16.8 mA
2.9
4.8
7.5
Temperature coefficient of threshold
voltage
V
GE(th)
/
T
J
V
CE
= V
GE
, I
C
= 1 mA (25 °C to 125 °C)
-
- 17.8
-
mV/°C
Forward transconductance
g
fe
V
CE
= 20 V, I
C
= 300 A
-
315
-
S
Transfer characteristics
V
GE
V
CE
= 20 V, I
C
= 300 A
-
7.9
-
V
Zero gate voltage collector current
I
CES
V
GE
= 0 V, V
CE
= 600 V
-
0.4
250
μA
V
GE
= 0 V, V
CE
= 600 V, T
J
= 125 °C
-
300
-
Gate to emitter leakage current
I
GES
V
GE
= ± 20 V, V
CE
= 0 V
-
-
± 500
nA
D5 - D6 CLAMPING DIODE
Cathode to anode blocking voltage
V
BR
I
R
= 100 μA
600
-
-
V
Forward voltage drop
V
FM
I
F
= 150 A
-
2.17
2.7
I
F
= 150 A, T
J
= 125 °C
-
1.61
-
Reverse leakage current
I
RM
V
R
= 600 V
-
0.25
200
μA
V
R
= 600 V, T
J
= 125 °C
-
140
-
D1 - D2 - D3 - D4 AP DIODE
Forward voltage drop
V
FM
I
F
= 150 A
-
2.17
2.7
V
I
F
= 150 A, T
J
= 125 °C
-
1.61
-
SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Q1 - Q2 - Q3 - Q4 TRENCH IGBT
Total gate charge (turn-on)
Q
g
I
C
= 300 A
V
CC
= 400 V
V
GE
= 15 V
-
750
-
nC
Gate to ermitter charge (turn-on)
Q
ge
-
210
-
Gate to collector charge (turn-on)
Q
gc
-
300
-
Turn-on switching loss
E
ON
I
C
= 150 A, V
CC
= 300 V
V
GE
= 15 V, R
g
= 10
L = 500 μH , T
J
= 25 °C
-
2.1
-
mJ
Turn-off switching loss
E
OFF
-
3.1
-
Total switching loss
E
TOT
-
5.2
-
Turn-on switching loss
E
ON
I
C
= 300 A, V
CC
= 300 V
V
GE
= 15 V, R
g
= 22
L = 500 μH, T
J
= 25 °C
-
8.6
-
Turn-off switching loss
E
OFF
-
15.4
-
Total switching loss
E
TOT
-
24
-
Turn-on switching loss
E
ON
I
C
= 150 A
V
CC
= 300 V
V
GE
= 15 V
R
g
= 10
L = 500 μH
T
J
= 125 °C
-
2.6
-
Turn-off switching loss
E
OFF
-
3.7
-
Total switching loss
E
TOT
-
6.3
-
Turn-on delay time
t
d(on)
-
453
-
ns
Rise time
t
r
-
120
-
Turn-off delay time
t
d(off)
-
366
-
Fall time
t
f
-
119
-