C&H Technology VS-GT300FD060N - Manual (Page 7)

VS-GT300FD060N
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Vishay Semiconductors
Revision: 15-Oct-12 6 Document Number: 93569
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Fig. 13 - Typical Trench IGBT Energy Loss vs. I
C
,
T
J
= 125 °C, V
CC
= 300 V, R
g
= 22
, V
GE
= 15 V, L = 500 μH
Fig. 14 - Typical IGBT Switching Time vs. I
C
,
T
J
= 125 °C, V
CC
= 300 V, R
g
= 22
, V
GE
= 15 V, L = 500 μH
Fig. 15 - Typical Trench IGBT Energy Loss vs.R
g
,
T
J
= 125 °C, V
CC
= 300 V, I
C
= 300 A, V
GE
= 15 V, L = 500 μH
Fig. 16 - Typical Trench IGBT Switching Time vs.R
g
,
T
J
= 125 °C, V
CC
= 300 V, I
C
= 300 A, V
GE
= 15 V, L = 500 μH
Fig. 17 - Trench IGBT Reverse Bias SOA
T
J
= 175 °C, V
GE
= 15 V, R
g
= 22

Fig. 18 - Typical Diode Reverse Recovery Time vs. dI
F
/dt,
V
rr
= 200 V, I
F
= 50 A
I
C
(A)
Ener
g
y (mJ)
1
3
5
7
9
11
13
15
17
20 60 100 140 180 220 260 300 340
E
ON
E
OFF
S
w
itc
h
in
g
ti
m
e
(n
s
)
I
C
(A)
10
100
1000
20 60 100 140 180 220 260 300 340
t
f
t
d(on)
t
d(off)
t
r
R
g
( Ω)
Ener
g
y (mJ)
8
11
14
17
20
23
26
29
32
20 23 26 29 32 35 38 41 44 47 50
E
ON
E
OFF
10
100
1000
10 000
20 23 26 29 32 35 38 41 44 47 50
S
w
itc
h
in
g
t
ime
(n
s)
R
g
( Ω)
t
d(on)
t
d(off)
t
r
t
f
1000
100
10
1
0 100 200 300 400 500 600 700
V
CE
(V)
I C
(A)
t rr
(ns)
dI
F
/dt (A/μs)
60
80
100
120
140
160
180
200
220
240
100 200 300 400 500
T
J
= 25 °C
T
J
= 125 °C