Vishay semiconductors – C&H Technology VS-GT300FD060N User Manual

Page 4

Advertising
background image

VS-GT300FD060N

www.vishay.com

Vishay Semiconductors

Revision: 15-Oct-12

3

Document Number: 93569

For technical questions within your region:

[email protected]

,

[email protected]

,

[email protected]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Q1 - Q2 - Q3 - Q4 TRENCH IGBT

Turn-on switching loss

E

ON

I

C

= 300 A

V

CC

= 300 V

V

GE

= 15 V

R

g

= 22

L = 500 μH
T

J

= 125 °C

-

10.7

-

mJ

Turn-off switching loss

E

OFF

-

15.6

-

Total switching loss

E

TOT

-

26.3

-

Turn-on delay time

t

d(on)

-

840

-

ns

Rise time

t

r

-

279

-

Turn-off delay time

t

d(off)

-

566

-

Fall time

t

f

-

129

-

Input capacitance

C

ies

V

GE

= 0 V

V

CC

= 30 V

f = 1 MHz

-

23.3

-

nF

Output capacitance

C

oes

-

1.7

-

Reverse transfer capacitance

C

res

-

0.7

-

Reverse bias safe operating area

RBSOA

T

J

= 175 °C, I

C

= 650 A

V

CC

= 270 V, V

P

= 600 V

R

g

= 22

, V

GE

= 15 V to 0 V

Short circuit safe operating area

SCSOA

V

CC

= 400 V, V

p

= 600 V

R

g

= 10

, V

GE

= 15 V to 0 V

-

-

5.0

μs

D5 - D6 CLAMPING DIODE

Diode reverse recovery time

t

rr

V

R

= 200 V

I

F

= 50 A

dl/dt = 500 A/μs

-

105

-

ns

Diode peak reverse current

I

rr

-

13.5

-

A

Diode recovery charge

Q

rr

-

712

-

nC

Diode reverse recovery time

t

rr

V

R

= 200 V

I

F

= 50 A

dl/dt = 500 A/μs, T

J

= 125 °C

-

166

-

ns

Diode peak reverse current

I

rr

-

24.5

-

A

Diode recovery charge

Q

rr

-

2050

-

nC

D1 - D2 - D3 - D4 AP DIODE

Diode reverse recovery time

t

rr

V

R

= 200 V

I

F

= 50 A

dl/dt = 500 A/μs

-

105

-

ns

Diode peak reverse current

I

rr

-

13.5

-

A

Diode recovery charge

Q

rr

-

712

-

nC

Diode reverse recovery time

t

rr

V

R

= 200 V

I

F

= 50 A

dl/dt = 500 A/μs, T

J

= 125 °C

-

166

-

ns

Diode peak reverse current

I

rr

-

24.5

-

A

Diode recovery charge

Q

rr

-

2050

-

nC

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL

MIN.

TYP.

MAX.

UNITS

Junction to case IGBT thermal resistance (per switch)

R

thJC

-

-

0.12

°C/W

Junction to case diode thermal resistance (per diode)

-

-

0.3

Case to sink, flat, greased surface (per module)

R

thCS

-

0.05

-

Mounting torque, case to heatsink: M6 screw

4

-

6

Nm

Mounting torque, case to terminal: 1, 2, 3, 4: M5 screw

2

-

4

Weight

-

270

-

g

SWITCHING CHARACTERISTICS (T

J

= 25 °C unless otherwise noted)

Advertising