Vishay semiconductors – C&H Technology VS-GT300FD060N User Manual
Page 5
VS-GT300FD060N
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Vishay Semiconductors
Revision: 15-Oct-12
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Document Number: 93569
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Fig. 1 - Typical Trench IGBT Output Characteristics, V
GE
= 15 V
Fig. 2 - Typical Trench IGBT Output Characteristics, T
J
= 125 °C
Fig. 3 - Maximum Trench IGBT Continuous Collector Current vs.
Case Temperature (per switch)
Fig. 4 - Typical Trench IGBT Collector to Emitter Voltage vs.
Junction Temperature, V
GE
= 15 V
Fig. 5 - Typical Trench IGBT Transfer Characteristics
Fig. 6 - Typical Trench IGBT Gate Threshold Voltage
V
CE
(V)
I
C
(A)
0
50
100
150
200
250
300
350
400
450
500
550
600
0
0.5
1
1.5
2
2.5
3
3.5
4
T
J
= 25 °C
T
J
= 125 °C
T
J
= 175 °C
V
CE
(V)
I
C
(A)
0
50
100
150
200
250
300
350
400
450
500
550
600
0
0.5
1
1.5
2
2.5
3
3.5
4
V
GE
= 12 V
V
GE
= 15 V
V
GE
= 18 V
V
GE
= 9 V
I
C
-
Continuous
Collector Current (A)
Allowable
Case
Temperature
(°C)
0
20
40
60
80
100
120
140
160
180
200
0
50
100 150 200 250 300 350 400 450
DC
T
J
-
Junction Temperature (°C)
V
CE
(V)
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0
20
40
60
80
100 120 140 160 180
300 A
150 A
80 A
V
GE
(V)
I
CE
(A)
0
50
100
150
200
250
300
350
400
450
500
550
600
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
T
J
= 25 °C
T
J
= 125 °C
V
CE
= 20 V
V
G
E(th)
(V)
I
C
(mA)
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
T
J
= 25 °C
T
J
= 125 °C