Datasheet, Primary mtp igbt power module, Vishay semiconductors – C&H Technology VS-100MT060WDF User Manual

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VS-100MT060WDF

www.vishay.com

Vishay Semiconductors

Revision: 01-Mar-12

1

Document Number: 93412

For technical questions, contact:

[email protected]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Primary MTP IGBT Power Module

FEATURES

• Buck PFC stage with warp 2 IGBT and FRED Pt

®

hyperfast diode

• Integrated thermistor

• Isolated baseplate

• Compliant to RoHS Directive 2011/65/EU

• Very low stray inductance design for high speed operation

• Designed and qualified for industrial level

BENEFITS

• Lower conduction losses and switching losses

• Higher switching frequency up to 150 kHz

• Optimized for welding, UPS, and SMPS applications

• PCB solderable terminals

• Direct mounting to heatsink

PRODUCT SUMMARY

FRED Pt

®

AP DIODE, T

J

= 150 °C

V

RRM

600 V

I

F(DC)

at 80 °C

11 A

V

F

at 25 °C at 60 A

2.08 V

IGBT, T

J

= 150 °C

V

CES

600 V

V

CE(ON)

at 25 °C at 60 A

1.98 V

I

C

at 80°C

83 A

FRED Pt

®

CHOPPER DIODE, T

J

= 150 °C

V

R

600 V

I

F(DC)

at 80 °C

17 A

V

F

at 25 °C at 60 A

2.06 V

MTP

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

MAX.

UNITS

FRED Pt
Antiparallel
Diode

Repetitive peak reverse voltage

V

RRM

600

V

Maximum continuous forward current

T

J

= 150 °C maximum

I

F(DC)

T

C

= 25 °C

17

A

T

C

= 80 °C

11

Maximum power dissipation

P

D

T

C

= 25 °C

25

W

IGBT

Collector to emitter voltage

V

CES

T

J

= 25 °C

600

V

Gate to emitter voltage

V

GE

I

GES

max. ± 250 ns

± 20

V

Maximum continuous collector current

at V

GE

= 15 V, T

J

= 150 °C maximum

I

C

T

C

= 25 °C

121

A

T

C

= 80 °C

83

Clamped inductive load current

I

LM

300

Maximum power dissipation

P

D

T

C

= 25 °C

462

W

FRED Pt
Chopper Diode

Repetitive peak reverse voltage

V

RRM

600

V

Maximum continuous forward current
T

J

= 150 °C maximum

I

F

T

C

= 25 °C

26

A

T

C

= 80 °C

17

Maximum power dissipation

P

D

T

C

= 25 °C

56

W

Maximum operating junction temperature

T

J

150

°C

Storage temperature range

T

Stg

- 40 to + 150

Isolation voltage

V

ISOL

V

RMS

t = 1 s, T

J

= 25 °C

3500

V

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